ESR Study of Zn-codoping Effect on the Luminescence Efficiency of the Er-2O Center in GaAs:Er,O

Yoshida, Mihoko; Hiraka, K.; Ohta, H.; Fujiwara, Yoshihiro; Koizumi, Atsuya; Takeda, Yuitsu

doi:10.1063/1.1994023

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“…Therefore, the selective formation of highly efficient luminescent Er centers for light-emitting devices is desired. [6][7][8][9] Furthermore, electroluminescence (EL), which is related to the Er-2O center, has been successfully achieved in GaAs:Er,O homostructure and GaInP/GaAs:Er,O/GaInP double heterostructure (DH) light-emitting diodes (LEDs) by current injection. Er-doped GaAs with O 2 co-doping (GaAs:Er,O) exhibits the sharp, simple PL spectrum of Er 3þ (Ref.…”

Section: Introductionmentioning

confidence: 99%

“…Er-doped GaAs with O 2 co-doping (GaAs:Er,O) exhibits the sharp, simple PL spectrum of Er 3þ (Ref. [6][7][8][9]16,17 However, there have been no reports on the detailed line shape analysis and linewidth of Er-concentration dependence. The luminescent Er center has been identified as Er 3þ at the Ga sublattice with two adjacent oxygen atoms (Er-2O center) based on polarized PL spectroscopy, 2 extended x-ray absorption fine structure (EXAFS) measurement, 3 Zeeman analysis, 4,5 and electron spin resonance (ESR) measurement.…”

Section: Introductionmentioning

confidence: 99%

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Electron spin resonance study of photoluminescent material GaAs:Er,O-Er concentration effect

Fujisawa

Asakura

Elmasry

et al. 2011

Journal of Applied Physics

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Electron spin resonance study of Zn -codoping effect on the local structure of the Er -related centers in GaAs : Er , O Electron spin resonance of Er-oxygen complexes in GaAs grown by metal organic chemical vapor deposition Although the photoluminescent material GaAs:Er,O has attracted much attention, the mechanism underlying its luminescence is unclear. To elucidate this mechanism, we have performed X-band electron spin resonance (ESR) measurements for different Er concentration samples. Several anisotropic ESR signals (A, B, and C) were observed, which is consistent with the previous reports. When the Er concentration is increased, the angular dependence of the resonance field is not affected, but the linewidth increases. From the Er concentration dependence of linewidth and the lineshape analysis, the dominant interaction between spins is not the magnetic dipole interaction but the exchange interaction. From the temperature dependence of integrated intensity, the exchange interaction between the nearest Er ions is antiferromagnetic, and this system has a singletlike ground state. We conclude that the Er-2O center is not distributed homogeneously in GaAs. A possible model is that the luminescent Er-related center consists of two Er atoms and that the luminescent B center seems to form pairs with the C center.

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Section: Introductionmentioning

confidence: 99%