Estimation and analysis for modelling of stand-alone graphene/AlGaAs/GaAs schottky solar photovoltaic cell module for power conversion efficiency

Hungyo, Shingmila; Dhar, Rudra Sankar; Kumar, Krishna; Singh, Khomdram Jolson; Dey, Rajesh; Bhattacharya, Sumanta

doi:10.1007/s00542-020-05141-9

Cited by 10 publications

(2 citation statements)

References 24 publications

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“…With the increase in In content, the range of the wavelength for absorption increases due to stretching of light wavelength toward the red region in the solar spectrum 41 – 43 However, there are disadvantages with the increase in In content, such as lattice mismatch, decrement of fill factor, and development of strain in the QW structure, which decreases the performance of the solar cell 39 , 40 , 44 . The reduction in the fill factor with the increase in the In content is due to lowering of the charge carrier generation.…”

Section: Resultsmentioning

confidence: 99%

High efficient step graded Inx Ga1−x N/GaN superlattice solar cell

Warepam,

Singh,

Dhar

2024

J. Nanophoton.

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The band-gap of In x Ga 1−x N can cover a wide range of electromagnetic radiation of the solar spectrum and offers a method for using it in photovoltaic solar cells. A solar cell structure consisting of In x Ga 1−x N∕GaN superlattice (SL) piled up between p-GaN and n-GaN is modeled and simulated. The impact of variations in the indium mole fraction and step graded SL having different quantum well thicknesses are analyzed. The results indicate that high indium content leads to lattice mismatch, decrement of fill factor, and development of strain in the quantum wells that reduce the overall efficiency. To increase the efficiency of the solar cell, a step graded 20 SL with a 5 nm quantum well thickness is introduced, and the highest efficiency of 22.6% is obtained. The use of a step graded SL InGaN cell allows for constructing real structures with the possibility of obtaining the enhanced power conversion efficiency compared with a conventional quantum well solar cell using SILVACO TCAD.

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Section: Resultsmentioning

confidence: 99%

High efficient step graded Inx Ga1−x N/GaN superlattice solar cell

Warepam,

Singh,

Dhar

2024

J. Nanophoton.

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“…In ref. 85, the authors report the theoretical model for a PV device based on the Pt/graphene/AlGaAs/n-GaAs/Al architecture. The mathematical-model-oriented simulation is carried out using the SILVACO TCAD software.…”

Section: Simulation and Mathematical Modelling Of 2d Materialbased So...mentioning

confidence: 99%