Estimation of electron potential emission yield dependence on metal and ion parameters

Kishinevsky, L. M.

doi:10.1080/00337577308232211

Cited by 84 publications

(25 citation statements)

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“…However, it is difficult to predict the value of γ from the above inequality, because γ is also affected by such processes as penetration of incident ions, energy transfer from the ions to electrons in the solid, diffusion of electrons to the surface and electrochemical reactions at the surface, among others. The cathode fall voltage is known to be closely related to γ , which was treated theoretically in references [39,44] and evaluated experimentally in this study, using the C12A7 electride. Figure 3 shows the setup used for measuring γ in this study [32][33][34][35][45][46][47][48][49].…”

Section: Secondary Electron Emissionmentioning

confidence: 99%

Secondary electron emission and glow discharge properties of 12CaO·7Al₂O₃electride for fluorescent lamp applications

Watanabe

Ito

et al. 2011

Science and Technology of Advanced Materials

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12CaO·7Al 2 O 3 electride, a sub-nanoporous compound having a work function of 2.4 eV, was examined as a candidate cathode material in fluorescent lamps. The electron emission yield was higher and the discharge voltage was lower for 12CaO·7Al 2 O 3 than for existing cathode materials such as Ni, Mo or W; therefore, the energy consumption of the fluorescent lamps can be improved using 12CaO·7Al 2 O 3 cathodes. Prototype glow-discharge lamps using 12CaO·7Al 2 O 3 were constructed and exhibited reasonable durability.

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Section: Secondary Electron Emissionmentioning

confidence: 99%

Secondary electron emission and glow discharge properties of 12CaO·7Al₂O₃electride for fluorescent lamp applications

Watanabe

Ito

et al. 2011

Science and Technology of Advanced Materials

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“…The ion-induced secondary electron emission coefficient ( ) of C12A7electride has been presented in our previous report [6]. The  value for the C12A7 electride bombarded with Ar + ions,  Ar+ , is above 0.1 from the report,and higher than for Ni metal (, as caluclated by using Kishinevsky's equation [7]. Therefore, C12A7-lamp showed lower cathode fall voltage than Ni-lamp.…”

Section: Measurement Methods Of Electrical and Optical Characteristicsmentioning

confidence: 95%

52.3: A Use of Electrically Conductive Oxide Ceramic (12CaO·7Al₂O₃ Electride) Electrode having Low Work Function and Low Sputtering Yield for Fluorescent Lamps

Miyakawa

Watanabe

et al. 2011

Symp Digest of Tech Papers

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A significantly low cathode fall voltage of 140 V and a high sputtering resistance at the driving current as large as 20 mA were observed for the cold cathode fluorescent lamps that comprise the ceramic cathode electrodes made of 12CaO·7Al 2 O 3 electride. The electride is a subnanoporous compound having a work function of 2.4 eV and electrical conductivity of 1670 S/m. The electrode was also found to be applicable to hot cathodes for glow and arc discharges.

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“…The ionization potential of the Ar + -ion, I i , is 16 eV, therefore electrons can be emitted by an Auger neutralization process. As to PE, Kishinevskii 21 and Baragiola 22 reported that emission yield γ is proportional to the maximum emission energy, I i -2Φ. Thus, we make a graph of I i -2Φ vs. Z 2 and show it in Fig.…”

Section: Discussionmentioning

confidence: 99%

Material Contrast of Scanning Electron and Ion Microscope Images of Metals

et al. 2008

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IntroductionThe rapid technical development of FIM (Focused Ion Beam) technology has spawned an increase in spatial resolution capability in scanning ion microscopy (SIM) technology 1 . Furthermore, FIM has been used for preparation of thin specimens in transmission electron microscopy 2 and micro-fabrication of electronic devices in the semiconductor industry 3 . Recently, a scanning ion microscope with a helium field ion source has been developed 4 . Thus, the contrast formation of emission electron images in scanning ion microscopy has been the object of study for analyzing images of materials specimens, similar to the theory behind scanning electron microscope (SEM) contrast formation 5,6,7 . Furthermore, whether the electron emission yield γ induced by ion impact is periodic or non-periodic as a function of Z 2 (the atomic number of the target) has not been well studied in the low energy region from several keV to the several tens of keV values used in SIM. Thus, in the present article, comprehensive experiments on γ as a function of atomic number Z 2 and the electronic structures of target metals have been performed for a number of metals for incident beams of 10 keV electron, 3 keV Ar ExperimentOne of the tools used in this experiment is a scanning Auger electron microscope (JAMP-7800F) with a back pressure of 7x10 -8 Pa installed with a hemi-spherical electron energy analyzer, a secondary electron detector system, consisting of a scintillator and a photo-multiplier tube, and an Ar + -ion gun with a beam diameter that is variable from 0.1 to several mm. The other tool used is a scanning Ga + -ion microscope (Micron-9000) with a detector system composed of an annular micro-channel plate ,which is mounted coaxially with the incident beam and can be biased for detecting either positive or negative particles. Secondary electron yields are, in general, far larger than those of the secondary negative ions, so negative particle imaging is essentially electron imaging. The energies of the electron and Ar + ion beams of the JAMP-7800F were 10 keV and 3 keV, respectively, and the energy of Ga + -ion beam of the Micron-9000 was 30 keV.Secondary electron yields were measured from the integrated intensities of the secondary electron spectra in an energy range from 0 to 30 eV for the JAMP-7800 and from the output signals of the micro-channel plate for the Micron-9000. The secondary electron yields obtained in this study are therefore relative values in each experiment, because the experimental arrangements of the secondary electron detectors differ. Experimental resultsStrips of several metal films of 1µm thickness and 0.1~1 mm width were deposited on a Si(100)2×1 clean surface in the order of Z 2 . The target films were Al, Cu, Ag, and Au metals with a similar electronic structure. Fig.1(a) shows the secondary electron image obtained by the JAMP-7800F using a 10 keV electron beam. Brightness increases with Z 2 . Whereas Fig.1(b) shows the secondary electron image obtained by the Micron-9000 using a Ga + -ion beam ...

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Estimation of electron potential emission yield dependence on metal and ion parameters

Cited by 84 publications

References 4 publications

Secondary electron emission and glow discharge properties of 12CaO·7Al₂O₃electride for fluorescent lamp applications

Secondary electron emission and glow discharge properties of 12CaO·7Al₂O₃electride for fluorescent lamp applications

52.3: A Use of Electrically Conductive Oxide Ceramic (12CaO·7Al₂O₃ Electride) Electrode having Low Work Function and Low Sputtering Yield for Fluorescent Lamps

Material Contrast of Scanning Electron and Ion Microscope Images of Metals

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Estimation of electron potential emission yield dependence on metal and ion parameters

Cited by 84 publications

References 4 publications

Secondary electron emission and glow discharge properties of 12CaO·7Al2O3electride for fluorescent lamp applications

Secondary electron emission and glow discharge properties of 12CaO·7Al2O3electride for fluorescent lamp applications

52.3: A Use of Electrically Conductive Oxide Ceramic (12CaO·7Al2O3 Electride) Electrode having Low Work Function and Low Sputtering Yield for Fluorescent Lamps

Material Contrast of Scanning Electron and Ion Microscope Images of Metals

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Product

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Secondary electron emission and glow discharge properties of 12CaO·7Al₂O₃electride for fluorescent lamp applications

Secondary electron emission and glow discharge properties of 12CaO·7Al₂O₃electride for fluorescent lamp applications

52.3: A Use of Electrically Conductive Oxide Ceramic (12CaO·7Al₂O₃ Electride) Electrode having Low Work Function and Low Sputtering Yield for Fluorescent Lamps