Estimation of equivalent circuit parameters for a millimetre-wave GaAs PIN diode switch

Takasu, Hideki

doi:10.1049/ip-cds:20030335

Cited by 9 publications

(3 citation statements)

References 4 publications

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“…A PIN-diode is represented by its equivalent model, a combination of passive lumped elements to reflect its intrinsic parasites; the ON-state is modeled by the on-resistance R on while the OFF-state is represented by a parallel combination of the off-capacitance C off and the isolation-resistance R off [6]. Due to ωR off C off 1, the isolation-resistance R off is ignored from the off-state equivalent model.…”

Section: Design and Analysismentioning

confidence: 99%

A package-level implementation of traveling-wave switch using PIN-diodes

Kaleem

Rentsch

Humbla

et al. 2013

2013 IEEE 22nd Conference on Electrical Performance of Electronic Packaging and Systems

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A single-pole single-throw switch constituting the transparent path in a reconfigurable switch matrix is presented, improving the availability of the switch matrix in case of an on-board power-fail. The design of the switch is based on the traveling-wave concept using packaged PIN-diodes on a thickfilm ceramic substrate under the constraints on the number of PIN-diodes and power dissipation. The circuit design and analysis of the switch based on the concept of an artificial transmissionline are described. Unlike the traditional low-pass characteristics inherent to traveling-wave switches, high isolation is achieved by transforming the parasites of the PIN-diodes in the shunt arms to reveal band-pass characteristics besides assisting the assembly of the package. On-wafer measurements reveal an isolation ≥ 45 dB and an insertion loss ≤ 6 dB in the Ka-band downlink frequencies (17...22 GHz).

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Section: Design and Analysismentioning

confidence: 99%

A package-level implementation of traveling-wave switch using PIN-diodes

Kaleem

Rentsch

Humbla

et al. 2013

2013 IEEE 22nd Conference on Electrical Performance of Electronic Packaging and Systems

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“…Generally speaking, a PIN diode could be converted into a series and parallel RLC equivalent circuit, such as the scheme described in Ref. [17], R off , R on , C on , and C off are the intrinsic resistances and capacitances of the PIN diode in the on-and off-state, respectively. When the PIN diodes are reverse biased or zero biased, the equivalent resistance R off is extremely large, the PIN diodes are equivalent to a large resistance shunt capacitor.…”

Section: Design and Analysismentioning

confidence: 99%

Design of double-layer active frequency-selective surface with PIN diodes for stealth radome

Deng¹,

Chen²

2017

Chinese Phys. B

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An experimental double-layer active frequency-selective surface (AFSS) for stealth radome is proposed. The AFSS is a planar structure which is composed of a fixed frequency-selective surface (FSS), a PIN diodes array, and a DC bias network. The AFSS elements incorporating switchable PIN diodes are discussed. By means of controlling the DC bias network, it is possible to switch the frequency response for reflecting and transmitting. Measured and simulated data validate that when the incidence angle varies from 0 • to 30 • the AFSS produces more than −11.5 dB isolation across 6-18 GHz when forward biased. The insertion loss (IL) is less than 0.5 dB across 10-11 GHz when reverse biased.

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“…On the other hand, since most of the equivalent models offered by the manufacturer are extracted from a low frequency measurement, usually 1 MHz or 10 GHz, they can hardly describe the performance of the diode at the millimeter-wave frequency accurately. High frequency measurement model based on specific mounting configuration [8] presents accurate parameters, but it is also a time-consuming and costly task. Numerical electromagnetic simulation is a cost-effective method in the millimeter-wave circuit design.…”

mentioning

confidence: 99%

Analysis and Design of a Novel W-band SPST Switch by Employing Full-Wave EM Simulator

Guo

Cheng

et al. 2011

J Infrared Milli Terahz Waves

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In this paper, a W-band single pole single throw (SPST) switch based on a novel PIN diode model is presented. The PIN diode is modeled using a full-wave electromagnetic (EM) simulator and its parasitic parameters under both forward and reverse bias states are described by a T-network. By this approach, the measurement-based model, which is usually a must for high performance switch design, is no longer necessary. A compensation structure is optimized to obtain a high isolation of the switch. Accordingly, a W-band SPST switch is designed using a full wave EM simulator. Measurement results agree very well with simulated ones. Our measurements show that the developed switch has less than 1.5 dB insertion loss under the 'on' state from 88 GHz to 98 GHz. Isolation greater than 30 dB over 2 GHz bandwidth and greater than 20 dB over 5 GHz bandwidth can be achieved at the center frequency of 94 GHz under the 'off' state.

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Estimation of equivalent circuit parameters for a millimetre-wave GaAs PIN diode switch

Cited by 9 publications

References 4 publications

A package-level implementation of traveling-wave switch using PIN-diodes

A package-level implementation of traveling-wave switch using PIN-diodes

Design of double-layer active frequency-selective surface with PIN diodes for stealth radome

Analysis and Design of a Novel W-band SPST Switch by Employing Full-Wave EM Simulator

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