Estimation of Insulated-gate Bipolar Transistor Operating Temperature: Simulation and Experiment

Bahun, Ivan; Šunde, Viktor; Jakopović, Željko

doi:10.6113/jpe.2013.13.4.729

Cited by 25 publications

(8 citation statements)

References 12 publications

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Section: The Closed-loop Gd Tuning and Experimental Resultsmentioning

confidence: 99%

“…Several studies evaluate the variations of the threshold voltages in IGBTs [28,29]. In [29], the effect of temperature on the threshold v Ge value was evaluated using different device manufacturers. The results showed that the threshold voltage in different IGBTs was reduced up to 1 V by increasing the temperature from 25 • C to 120 • C. It is a key point that the increase of temperature has a negative effect on the v Ge(th) value.…”

Section: The Closed-loop Gd Tuning and Experimental Resultsmentioning

confidence: 99%

“…This factor has a significant effect on IGBT switching characteristic values [27], as it may change the dynamic behaviour of gate voltage (V Ge ) and current (i G ). Furthermore, threshold gate-emitter voltage (V Ge,th ) may vary with different temperatures [28][29][30]. Therefore, considering Tj for some of the controllers that are dealing with gate side parameters is essential.…”

Section: Junction Temperature (Tj)mentioning

confidence: 99%

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A Simple Closed-Loop Active Gate Voltage Driver for Controlling diC/dt and dvCE/dt in IGBTs

et al. 2019

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The increase of the switching speed in power semiconductors leads to converters with better efficiency and high power density. On the other hand, fast switching generates some consequences like overshoots and higher switching transient, which provoke electromagnetic interference (EMI). This paper proposes a new closed-loop gate driver to improve switching trajectory in insulated gate bipolar transistors (IGBTs) at the hard switching condition. The proposed closed-loop gate driver is based on an active gate voltage control method, which deals with emitter voltage (VEe) for controlling diC/dt and gets feedback from the output voltage (vCE) in order to control dvCE/dt. The sampled voltage signals modify the profile of the applied gate voltage (vgg). As a result, the desired gate driver (GD) improves the switching transients with minimum switching loss. The operation principle and implementation of the controller in the GD are thoroughly described. It can be observed that the new GD controls both dvCE/dt and diC/dt accurately independent of the variable parameters. The new control method is verified by experimental results. As a current issue, the known trade-off between switching losses and EMI is improved by this simple and effective control method.

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Section: The Closed-loop Gd Tuning and Experimental Resultsmentioning

confidence: 99%

Section: The Closed-loop Gd Tuning and Experimental Resultsmentioning

confidence: 99%

Section: Junction Temperature (Tj)mentioning

confidence: 99%

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A Simple Closed-Loop Active Gate Voltage Driver for Controlling diC/dt and dvCE/dt in IGBTs

et al. 2019

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“…The heat generated by the high-power semiconductor device will cause the temperature rise of the chip. If there are no appropriate cooling measures, the working temperature of the chip will exceed the allowable maximum temperature, which will lead to deterioration or even damage of the device performance [1]. It has been shown that for every 10 • C increase in the temperature of a semiconductor chip, the reliability of the chip is reduced by half.…”

Section: Introductionmentioning

confidence: 99%

Study on structure optimization of a dual IGBT module heat sink in a DC–DC converter under natural convection based on field synergy theory

Guang-yi

Zhang

Gao

2019

IEEJ Transactions Elec Engng

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Aiming at the heat sink with dual insulated gate bipolar transistor (IGBT) modules in a direct current to direct current (DC-DC) converter, the calculation of the temperature field of the cooling structure with low power consumption is completed by using Icepak simulation software, and analysis of the influence of the two IGBT module installation distance on the maximum temperature. The simulation results show that the maximum temperature of two heat sources decreases with the installation distance, but the maximum decline is not more than 0.5 • C. Based on field synergy theory, it is found that the local structure of the heat sink is not conducive to the natural convection heat transfer. Therefore, the improved measures of slotting the plate are proposed, and the effectiveness of this measure to reduce the heat source temperature is verified by simulation analysis and experiment. The influence of slot size on the maximum temperature of heat source is analyzed: the maximum temperature of heat source decreases with the increase of slot size. When the slot size is 16 mm, the cooling effect is obvious, and the maximum temperature drop is up to 6 • C compared with that before the slotting. Besides, the slot processing can also reduce the heat sink material and reduce the weight.

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“…To realize the -method during inverter operation a switching sequence with attached measurement phase could be used [20,21], but this also results in an interruption of the motor current and deteriorates the system properties. In [22,23] the temperature sensitive quasi-threshold voltage is used for junction temperature measurement. Thereby the induced voltage across the parasitic inductance between the power emitter and an auxiliary emitter is used to trigger the measurement of the gate emitter voltage.…”

Section: Igbt Driver With Measurementmentioning

confidence: 99%

Online Junction Temperature Cycle Recording of an IGBT Power Module in a Hybrid Car

Denk

Bakran

2015

Advances in Power Electronics

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The accuracy of the lifetime calculation approach of IGBT power modules used in hybrid-electric powertrains suffers greatly from the inaccurate knowledge of application typical load-profiles. To verify the theoretical load-profiles with data from the field this paper presents a concept to record all junction temperature cycles of an IGBT power module during its operation in a test vehicle. For this purpose the IGBT junction temperature is measured with a modified gate driver that determines the temperature sensitive IGBT internal gate resistor by superimposing the negative gate voltage with a high-frequency identification signal. An integrated control unit manages the measurement during the regular switching operation, the exchange of data with the system controller, and the automatic calibration of the sensor system. To calculate and store temperature cycles on a microcontroller an online Rainflow counting algorithm was developed. The special feature of this algorithm is a very accurate extraction of lifetime relevant information with a significantly reduced calculation and storage effort. Until now the recording concept could be realized and tested within a laboratory voltage source inverter. Currently the IGBT driver with integrated junction temperature measurement and the online cycle recording algorithm is integrated in the voltage source inverter of first test vehicles. Such research will provide representative load-profiles to verify and optimize the theoretical load-profiles used in today's lifetime calculation.

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Estimation of Insulated-gate Bipolar Transistor Operating Temperature: Simulation and Experiment

Cited by 25 publications

References 12 publications

A Simple Closed-Loop Active Gate Voltage Driver for Controlling diC/dt and dvCE/dt in IGBTs

A Simple Closed-Loop Active Gate Voltage Driver for Controlling diC/dt and dvCE/dt in IGBTs

Study on structure optimization of a dual IGBT module heat sink in a DC–DC converter under natural convection based on field synergy theory

Online Junction Temperature Cycle Recording of an IGBT Power Module in a Hybrid Car

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