Estimation of Ion/Radical Flux from Mask Selectivity and Etching Rate Calibrated by Topography Simulation

Ohmine, Toshimitsu; Deshpande, Vaibhav; Takada, Hideki; Ikeda, Tomoharu; Saito, Hirokazu; Kawai, Fumiaki; Hamada, Keisuke

doi:10.7567/jjap.50.08kb03

Cited by 1 publication

(1 citation statement)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A topography simulation method to estimate the ion/ radical fluxes generated during Si etching using SF 6 /O 2 plasma has been reported. 106,107) The method utilizes the difference in etching mechanism between an SiO 2 mask where ions play an important role, and Si, where the F radical contribution is relatively large. The etching selectivity between SiO 2 and Si and the etching rates for both materials depend on molecular density, spontaneous reaction rate constant, flux of species, etching yield, and coverage of F radicals on the Si surface.…”

Section: Arde On Simentioning

confidence: 99%

Progress and perspectives in dry processes for nanoscale feature fabrication: fine pattern transfer and high-aspect-ratio feature formation

Iwase

Kamaji

Kang

et al. 2019

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

Dramatic advances are being made in dry processing technologies. Atomic scale precision below 10 nm is now possible with fine patterning technologies for high-volume manufacturing of semiconductor devices. The isotropic and anisotropic nature of both film deposition and etching is versatile for nanoscale fabrication of three-dimensional features, such as high-aspect-ratio (HAR) features. Here we conduct a systematic review of the literature over the last 40 years to evaluate the history and progress of dry processes with regard to fine pattern transfer, HAR feature formation, and multiple patterning as lithographic techniques. Finally, we address the major challenges shared across the plasma science and technology community.

show abstract

Section: Arde On Simentioning

confidence: 99%