Estimation of pattern shape based on CD-SEM image by using MPPC method

Onozuka, Toshihiko; Ojima, Yosuke; Meessen, Jeroen; Rijpers, Bart

doi:10.1117/12.655987

Cited by 6 publications

(1 citation statement)

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“…CD characterization on the line structures with a SEM (CD-SEM) has been comprehensively carried out, mainly for trapezoidal-like cross sections [14][15][16][17][18][19][20][21][22][23][24][25]. With the help of MC modelling, not only the linewidth but also the 3D morphological shape of the structure can be derived [26][27][28][29][30][31][32][33][34][35][36][37][38].…”

Section: Introductionmentioning

confidence: 99%

Critical-dimension scanning electron microscope characterization of smoothly varying wave structures with a Monte Carlo simulation

Khan¹,

Yang²,

Xiao³

et al. 2021

J. Phys. D: Appl. Phys.

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Scanning electron microscopy (SEM) characterization of a smoothly varying nanograting structure (a Pt-coated Cr grid on a Si substrate) with a sinusoidal waveform has been carried out by a Monte Carlo (MC) simulation technique. Previous studies with critical-dimension (CD) SEM (CD-SEM) have mostly concerned line structures with sharp edges so that there is an obvious edge bloom in the linescan profile of secondary electrons. In contrast, the present grating structures prepared by a laser-focused atomic deposition technique have a smoothly varying waveform in the cross-sectional profile, which pose greater difficulty for quantitative structural characterization by SEM. The grating structure, with a fixed pitch of λ/2 as the period of the standing-wave laser light field, where λ is the wavelength of the corresponding laser light, can be used as an ideal nanoscale metrological length tool; therefore, it is important to characterize its structural features over a large deposited area by SEM imaging for quality control, with the aim of mass reproduction. The present work extends the CD characterization of MC simulation methods to more complex structures. Taking into account different experimental factors, i.e. primary electron beam parameters, geometrical parameters and material properties, the unknown geometrical parameters (i.e. base height, peak height, linewidth shrinkage and peak tilt angle) of the grating lines have been successfully extracted from the experimental linescan profiles of SEM images.

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Section: Introductionmentioning

confidence: 99%

Critical-dimension scanning electron microscope characterization of smoothly varying wave structures with a Monte Carlo simulation

Khan¹,

Yang²,

Xiao³

et al. 2021

J. Phys. D: Appl. Phys.

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Uncertainty evaluation of Monte Carlo simulated line scan profiles of a critical dimension scanning electron microscope (CD-SEM)

Ding

Mao

Zou

et al. 2023

Journal of Applied Physics

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In recent years, precision and accuracy for a more precise critical dimension (CD) control have been required in CD measurement technology. CD distortion between the measurement by a critical dimension scanning electron microscope (CD-SEM) and a reference tool is the most important factor for a more accurate CD measurement. CD bias varies by a CD-SEM and a pattern condition. Therefore, it is urgently needed to identify, characterize, and quantify those parameters that may or may not affect the CD measurement by a CD-SEM. The sensitivity of the Monte Carlo simulated CD-SEM images with multiple physical modeling components has been studied previously. In this study, we demonstrate that the work function and elastic scattering potential models have a significant impact on secondary electron emission intensity, but their influence on the shape of the linescan profile is small, and other factors like the optical energy loss function and dielectric function models have even smaller effects. We have evaluated the uncertainty in the linescan profiles of Si line structures with different sidewall angles due to several different physical factors. It is found that when the CD is evaluated by a peak/valley method, the uncertainty of the CD is negligible. Therefore, it is concluded that the CD value and its related uncertainty are not critically related to the physical factors of the present Monte Carlo simulation model but rely dominantly on the line structure and electron beam parameters.

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A new fast QC method for testing contact hole roughness by defect review SEM image analysis

Takeda

Sawai

Uesugi

et al. 2007

2007 International Symposium on Semiconductor Manufacturing

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Estimation of pattern shape based on CD-SEM image by using MPPC method

Cited by 6 publications

References 0 publications

Critical-dimension scanning electron microscope characterization of smoothly varying wave structures with a Monte Carlo simulation

Critical-dimension scanning electron microscope characterization of smoothly varying wave structures with a Monte Carlo simulation

Uncertainty evaluation of Monte Carlo simulated line scan profiles of a critical dimension scanning electron microscope (CD-SEM)

A new fast QC method for testing contact hole roughness by defect review SEM image analysis

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