Estimation of Surface Tension of Molten Silicon Using a Dynamic Hanging Drop

Chung, Sang–Ik; Izunome, Koji; Yokotani, Atsushi; Kimura, Shigeyuki

doi:10.1143/jjap.34.l631

Cited by 18 publications

(14 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…is close to the reported experimental values (for Si; 0.22 [10], 0.28 [25], 0.308 [26] and 0.65 [27], and 0.08 mJ m −2 K −1 for Ge [11]). However, our results may be strictly compared with experimental surface tension data, as a function of temperature for molten Si and Ge, reported by others [22,[28][29][30][31][32].…”

Section: Calculations and Discussionsupporting

confidence: 91%

Theoretical Study of a Thermophysical Property of Molten Semiconductors

Aqra

Ayyad

2011

Journal of Metallurgy

View full text Add to dashboard Cite

This paper deals with theoretical approach to surface tension of molten silicon and germanium, and contributes to this field, which is very important. A theoretical calculation for determining the surface tension of high-temperature semiconductor melts, such as molten silicon and germanium, in the temperature range 1687-1825 K and 1211-1400 K, respectively, is described. The calculated temperature-dependence surface tension data for both Si and Ge are expressed as γ = 876 − 0.32 (T − T m ) and γ = 571 − 0.074 (T − T m ) (mJ m −2 ), respectively. These values are in consistence with the reported experimental data (720-875 for Si and 560-632 mJ m −2 for Ge). The calculated surface tension for both elements decreases linearly with temperature.

show abstract

Section: Calculations and Discussionsupporting

confidence: 91%

Theoretical Study of a Thermophysical Property of Molten Semiconductors

Aqra

Ayyad

2011

Journal of Metallurgy

View full text Add to dashboard Cite

show abstract

“…The values from Grobner et al were calculated by using ThermoCalc software [18]. a) b) c) Figure 2: Characteristic physical variables of liquid silicon versus temperature: a) surface tension [24][25][26][27][28][29][30][31][32][33][34][35], b) density [30,[34][35][36][37][38][39] and c) dynamic viscosity [30,35,40]. …”

Section: Resultsmentioning

confidence: 99%

SiC/Si composites elaboration by capillary infiltration of molten silicon

Roger

Guesnet

Marchais

et al. 2018

Journal of Alloys and Compounds

View full text Add to dashboard Cite

Infiltration of molten metal into ceramic performs without external pressure is a promising fabrication method for metal-matrix composites. Thus, this research is focused on the kinetic of capillary infiltration in the processing of Si/SiC composites. The calculation of the infiltration kinetics for a liquid in a porous material is possible by applying the modified-Washburn equation which involves the effective diameter of the pores. This equation implies a K value depending on the wetting angle, the density, the viscosity and the surface tension of the liquid at a given temperature. In this study, the main aim was to measure the K Si value of molten silicon infiltration into porous SiC at 1500°C. On this way, consolidated β-SiC powder compacts were prepared for infiltration experiments. The effects of the SiC particles presintering on the pore size were examined as they can affect molten silicon infiltration. So, the monitoring of the mass increase during hexadecane rise was used to determine the effective diameter of the pores. It was evidenced that an increase of 15.5% of the initial effective diameter occurs. Consequently, a corresponding correction has to be applied to the initial effective diameter of the siliconinfiltrated compacts. Infiltrations of pure molten silicon into SiC compacts were successfully carried out at 1500°C under high vacuum (5.10 -3 mbar) and the average value of K Si was found equal to (5.8±0.4)×10 -6 cm 5 .s.g -2 . The effect of molten silicon rise on the porosity was also considered.

show abstract

“…Except for data in (Refs. [78,79]) one group shows low surface tension at the melting temperature, i.e. σ = 700 − 750 × 10 −3 N/m and small absolute values of temperature coefficient −∂σ/∂T = 0.05 − 0.15 × 10 −3 N/K m. The other group shows rather high surface tension and large absolute values of temperature coefficient, i.e.…”

Section: Surface Tensionmentioning

confidence: 98%

“…He also recommended use of the levitation technique to avoid contamination problems introduced from the crucible wall or the substrate, because surface tension is sensitive to contamination, whereas surface tension was conventionally measured using the sessile drop method, the maximum bubble pressure method and the ring method, which employs such jigs. Chung et al [78] introduced a unique method to measure surface tension, i.e. the dynamic hanging-drop method.…”

Section: Surface Tensionmentioning

confidence: 99%

“…The rather large absolute value of temperature (58) g = 833− 0.0836(T−1410) (62,70,77) g = 819−0.308(T−1410) (78) g = 783.5− 0.65(T−1410) (79) g = 727− 0.1044(T−1410) (69) g =746−0.152(T−1410) (60,61) g =737−0.104(T−1410) (65) g =735−0.149(T−1410) (73) g =728.5−0.106(T−1410) (75) g = 716.5− 0.05(T−1410) (64) g = 707− 0.05(T−1410) ( coefficient of −0.65 × 10 −3 N/K-m is attributed to the use of the levitation technique, which is free from the crucible wall, as well as the use of pure Ar gas. In the course of preparatory research into microgravity experiments for the Marangoni flow of molten silicon, Mukai et al [80] measured surface tension and its temperature coefficient as a function of both temperature and oxygen partial pressure of an ambient atmosphere using the sessile drop method with a substrate made of p-BN, which can withstand molten silicon, as shown in Figs.…”

Section: Surface Tensionmentioning

confidence: 99%

See 1 more Smart Citation

Thermophysical Properties of Molten Silicon

Hibiya

Fukuyama

Tsukada

et al. 2008

Crystal Growth Technology

View full text Add to dashboard Cite

IntroductionModern society features information processing on a large scale and is supported by information technologies, which require high-speed data processing and high-speed data transmission. From the viewpoint of materials science and engineering, this is supported by high-quality semiconductor crystals, produced from high-temperature melt processes, such as the Czochralski, the floating zone, Bridgman processes, and so on. In order to understand and control these high-temperature processes, computer modeling is one of the superior tools available. This shows us the physics of these processes and how to improve processes and products, as shown in Fig. 4.1 [1]. This has been made possible thanks to the year-by-year improvements in computer performance, and even turbulence flow can now be handled. In modeling equations for continuity, momentum, energy and the Maxwell equation are solved simultaneously. In order to calculate temperature, flow and pressure fields of a high-temperature process, the thermophysical properties of the molten state in particular are indispensable. A survey was carried out on the required thermophysical properties for silicon crystal growth processes and on thermophysical properties actually employed in modeling in Japan: see Fig. 4.2 and Table 4.1 [2][3][4]. Table 4.1 shows thermophysical properties employed in 44 papers. The scatter of the data is rather large; particularly for the temperature coefficient of surface tension, the difference is one order of magnitude. Historically, Glazov et al. [5] reviewed thermophysical properties of molten semiconductors not only for molten silicon but also for other compound molten semiconductors. However, modern society requires the development of new measurement techniques and improvements in the accuracy and precision of data. Iida and Guthrie [6] overviewed thermophysical properties of molten metals and methods for measurements; this is a good textbook for thermophysical property measurement of high-temperature melts. Figure 4.2 shows that thermal conductivity, specific heat capacity and surface tension are urgently required. Although thermal conductivity is required to calculate heat balance at the solid/liquid interface during crystal growth and is important to Crystal Growth Technology. Edited by Hans J. Scheel and Peter Capper

show abstract

Estimation of Surface Tension of Molten Silicon Using a Dynamic Hanging Drop

Cited by 18 publications

References 15 publications

Theoretical Study of a Thermophysical Property of Molten Semiconductors

Theoretical Study of a Thermophysical Property of Molten Semiconductors

SiC/Si composites elaboration by capillary infiltration of molten silicon

Thermophysical Properties of Molten Silicon

Contact Info

Product

Resources

About