2020
DOI: 10.1016/j.physleta.2019.126145
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Estimation of the lowest limit of 1/f noise in semiconductor materials

Abstract: A lowest limit of 1/f noise in semiconductor materials has not yet been reported; we do not even know if such a lowest limit exists. 1/f noise in semiconductors has recently been brought into relation with 1/f noise in quantum dots and other materials. These materials exhibit on-off states which are power-law distributed over a wide range of timescales. We transfer such findings to semiconductors, assuming that the g-r process is also controlled by such on-off states. As a result, we obtain 1/f noise which can… Show more

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Cited by 3 publications
(5 citation statements)
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“…They explain 1/f noise in the bulk by a superposition of individual trapping events with a wide distribution of time constants. We do not agree with this interpretation: 1/f noise in a bulk semiconductor can also be explained by an intermittent g-r process [24,25], where the generation process is gated by on-off states. The intermittent g-r process does not need traps in an oxide layer exhibiting a wide distribution of time constants.…”
Section: Resultscontrasting
confidence: 59%
“…They explain 1/f noise in the bulk by a superposition of individual trapping events with a wide distribution of time constants. We do not agree with this interpretation: 1/f noise in a bulk semiconductor can also be explained by an intermittent g-r process [24,25], where the generation process is gated by on-off states. The intermittent g-r process does not need traps in an oxide layer exhibiting a wide distribution of time constants.…”
Section: Resultscontrasting
confidence: 59%
“…In this paper, thermal 1/f noise is interpreted on the basis of an intermittent g-r process. Such an intermittent g-r process has recently been introduced for deriving an alternative form of Hooge's relation [8][9]: by analogy to single quantum dots and other materials [15][16][17], we assume that the g-r process due to an individual trap is controlled by on-off-states. A power-law distributed on-state leads to an extended 1/f region.…”
Section: Resultsmentioning
confidence: 99%
“…For interpreting 1/f noise in semiconductors an intermittent g-r process has been introduced [8][9]. This section summarizes the spectral features of the intermittent g-r process as far as they are of relevance for the subsequent sections.…”
Section: /F Noise Due To the Intermittent G-r Processmentioning
confidence: 99%
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