Estimation of the Performance Improvement of Pre-Amplified PAM4 Systems When Using Multi-Section Semiconductor Optical Amplifiers

Dúill, Seán P. Ó; Landais, Pascal; Barry, Liam P.

doi:10.3390/app7090908

Cited by 7 publications

(3 citation statements)

References 18 publications

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“…In 2017, Duill SPO's research group built a simplified numerical model of a multi-section SOA suitable for the simulation of an optical communication system. This simulation model determined that a multi-section SOA could provide a 3 dB greater input power dynamic range compared with that of a single-section SOA, proving that the multi-segment SOA had better noise and linearity performance [73].…”

Section: Low-noise Figure (Nf)mentioning

confidence: 91%

A Review of High-Power Semiconductor Optical Amplifiers in the 1550 nm Band

Tang,

Yang,

Qin

et al. 2023

Sensors

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The 1550 nm band semiconductor optical amplifier (SOA) has great potential for applications such as optical communication. Its wide-gain bandwidth is helpful in expanding the bandwidth resources of optical communication, thereby increasing total capacity transmitted over the fiber. Its relatively low cost and ease of integration also make it a high-performance amplifier of choice for LiDAR applications. In recent years, with the rapid development of quantum-well (QW) material systems, SOAs have gradually overcome the shortcomings of polarization sensitivity and high noise. The research on quantum-dot (QD) materials has further improved the noise characteristics and transmission loss of SOAs. The design of special waveguide structures—such as plate-coupled optical waveguide amplifiers and tapered amplifiers—has also increased the saturation output power of SOAs. The maximum gain of the SOA has been reported to be more than 21 dB. The maximum saturation output power has been reported to be more than 34.7 dBm. The maximum 3 dB gain bandwidth has been reported to be more than 120 nm, the lowest noise figure has been reported to be less than 4 dB, and the lowest polarization-dependent gain has been reported to be 0.1 dB. This study focuses on the improvement and enhancement of the main performance parameters of high-power SOAs in the 1550 nm band and introduces the performance parameters, the research progress of high-power SOAs in the 1550 nm band, and the development and application status of SOAs. Finally, the development trends and prospects of high-power SOAs in the 1550 nm band are summarized.

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Section: Low-noise Figure (Nf)mentioning

confidence: 91%

A Review of High-Power Semiconductor Optical Amplifiers in the 1550 nm Band

Tang,

Yang,

Qin

et al. 2023

Sensors

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“…Ó Dúill, P. Landais, and L.P. Barry propose in Ref. [22] multi-section SOAs as pre-amplifiers for short range optical communication links within datacenters. By creating and employing a simplified multi-section SOA model, they evaluate the performance benefits offered by these special type SOAs, which are shown to exhibit better input power dynamic range than conventional single-section SOAs when amplifying single-as well as multi-channel signals of advanced modulation format (4-level pulse amplitude modulation/PAM4).…”

Section: Special Issue Papersmentioning

confidence: 99%

Special Issue on Applications of Semiconductor Optical Amplifiers

Zoiros

2018

Applied Sciences

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“…While EDFAs offer high gains and low noise figures, they have a narrow gain bandwidth of typically only about 60 nm and are bulky with high power consumption. Semiconductor optical amplifiers (SOAs) have significant advantages in miniaturization, energy efficiency, increased output power, reduced noise figure, and photonic integration [13][14][15][16][17]. Unlike polarization-sensitive SOAs, polarization-insensitive SOAs can amplify both TE-and TM-mode optical signals simultaneously, thereby enhancing the flexibility and scalability of networks.…”

Section: Introductionmentioning

confidence: 99%

Low-Polarization, Broad-Spectrum Semiconductor Optical Amplifiers

Zhang,

Tang

et al. 2024

Nanomaterials

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Polarization-insensitive semiconductor optical amplifiers (SOAs) in all-optical networks can improve the signal-light quality and transmission rate. Herein, to reduce the gain sensitivity to polarization, a multi-quantum-well SOA in the 1550 nm band is designed, simulated, and developed. The active region mainly comprises the quaternary compound InGaAlAs, as differences in the potential barriers and wells of the components cause lattice mismatch. Consequently, a strained quantum well is generated, providing the SOA with gain insensitivity to the polarization state of light. In simulations, the SOA with ridge widths of 4 µm, 5 µm, and 6 µm is investigated. A 3 dB gain bandwidth of >140 nm is achieved with a 4 µm ridge width, whereas a 6 µm ridge width provides more output power and gain. The saturated output power is 150 mW (21.76 dB gain) at an input power of 0 dBm but increases to 233 mW (13.67 dB gain) at an input power of 10 dBm. The polarization sensitivity is <3 dBm at −20 dBm. This design, which achieves low polarization sensitivity, a wide gain bandwidth, and high gain, will be applicable in a wide range of fields following further optimization.

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Estimation of the Performance Improvement of Pre-Amplified PAM4 Systems When Using Multi-Section Semiconductor Optical Amplifiers

Cited by 7 publications

References 18 publications

A Review of High-Power Semiconductor Optical Amplifiers in the 1550 nm Band

A Review of High-Power Semiconductor Optical Amplifiers in the 1550 nm Band

Special Issue on Applications of Semiconductor Optical Amplifiers

Low-Polarization, Broad-Spectrum Semiconductor Optical Amplifiers

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