Etch characteristics of gallium indium zinc oxide thin films in a HBr/Ar plasma

Kim, Eun Ho; Xiao, Yu Bin; Kong, Seon Mi; Chung, Chee Won

doi:10.1016/j.surfcoat.2010.07.084

Cited by 3 publications

(4 citation statements)

References 15 publications

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“…The etch rate linearly increased with the power increasing. This might be attributed to the increase of Ar ions and reactive radicals caused by the increase in the plasma density at a high coil rf power [23] . So the physical sputtering and the rate of chemical reactions on the etched surface increased.…”

Section: Effects Of Etch Parameters On Etching A-igzo Thin Filmsmentioning

confidence: 99%

“…Similar variations may occur during the dry etching of a-IGZO thin films. Fig.2 Etch rate of IGZO thin films etched at different rf powers and dc-bias voltages [23] Fig .3 Etch profile of IZO thin films at various coil rf powers: (a) 500 W, (b) 700 W, (c) 800 W [24]…”

Section: Coil Rf Power and Dc-bias Voltagementioning

confidence: 99%

“…So the effects of the gas pressure on the etch rate and etch profile are uncertain. The etch rate may increase [26] , decrease [23,24,26] or remain unchanged [27] with the gas pressure increasing. The gas pressure is usually in the range of 5∼200 mTorr.…”

Section: Gas Pressurementioning

confidence: 99%

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Dry Etching Characteristics of Amorphous Indium-Gallium-Zinc-Oxide Thin Films

Zheng¹,

Li²,

Wang³

et al. 2012

Plasma Sci. Technol.

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Amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) backplane technology is the best candidate for flat panel displays (FPDs). In this paper, a-IGZO TFT structures are described. The effects of etch parameters (rf power, dc-bias voltage and gas pressure) on the etch rate and etch profile are discussed. Three kinds of gas mixtures are compared in the dry etching process of a-IGZO thin films. Lastly, three problems are pointed out that need to be addressed in the dry etching process of a-IGZO TFTs.

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Section: Effects Of Etch Parameters On Etching A-igzo Thin Filmsmentioning

confidence: 99%

Section: Coil Rf Power and Dc-bias Voltagementioning

confidence: 99%

See 1 more Smart Citation

Dry Etching Characteristics of Amorphous Indium-Gallium-Zinc-Oxide Thin Films

Zheng¹,

Li²,

Wang³

et al. 2012

Plasma Sci. Technol.

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“…HBr inductively coupled plasma (ICP) has been used to etch various materials such as C, 1) Pb(Zr x Ti 1Àx )O 3 (PZT), 2) GaN, 3) indium tin oxide (ITO), 4,5) gallium indium zinc oxide (GIZO), 6) Mo, 7) CoFeB, 8) SiC, 9,10) ZnO, 11) Al-Nd, 12) InP, [13][14][15] Pt, 16) and Al 2 O 3 . [17][18][19] Most of all, HBr ICP has been extensively used for the selective etching of Si owing to its good anisotropy, high etching rate, and high selectivity in the reactive ion etching (RIE) process, and has been intensively investigated by many groups.…”

Section: Introductionmentioning

confidence: 99%

Influence of Oxygen Addition and Wafer Bias Voltage on Bromine Atom Surface Reaction in a HBr/Ar Inductively Coupled Plasma

Iino

Nojiri

Suzuki

et al. 2013

Jpn. J. Appl. Phys.

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The influence of the wafer surface material and wafer bias voltage on the Br radical density in HBr/Ar and HBr/Ar/O2 inductively coupled plasmas was investigated by appearance mass spectrometry. By increasing the bias voltage, a monotonic decrease in the Br radical density was observed irrespective of the surface material (Si, Al2O3) of the wafer. A drastic increase in Br radical density was observed after O2 addition to HBr/Ar plasma in the case of a bare Si wafer, whereas almost the same density was observed in the case of an Al2O3-sputtered Si wafer. X-ray photoelectron spectroscopy (XPS) analysis indicated that O2 addition promotes oxide formation on the Si surface. Measurement of the decay time constant for a Br radical after turning off the plasma indicated that O2 addition results in a longer decay time constant, suggesting the decrease of the surface loss probability of Br radicals for the surface-oxidized Si surface.

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Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances

2012

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Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which has led to the fabrication of high performance n- and p-type oxide transistors as well as the fabrication of CMOS devices with and on paper.

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Etch characteristics of gallium indium zinc oxide thin films in a HBr/Ar plasma

Cited by 3 publications

References 15 publications

Dry Etching Characteristics of Amorphous Indium-Gallium-Zinc-Oxide Thin Films

Dry Etching Characteristics of Amorphous Indium-Gallium-Zinc-Oxide Thin Films

Influence of Oxygen Addition and Wafer Bias Voltage on Bromine Atom Surface Reaction in a HBr/Ar Inductively Coupled Plasma

Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances

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