2000
DOI: 10.1007/s11664-004-0268-6
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Etch characteristics of GaN and BN materials in chlorine-based plasmas

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Cited by 14 publications
(12 citation statements)
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“…Generally, GaN is etched by inductively coupled plasmareactive ion etching (ICP-RIE). 10,11) Unfortunately, however, plasma readily causes damage to GaN, and there is low etching selectivity between the GaN and the etching mask. The issue of plasma damage has recently been solved by neutral-beam etching (NBE) and atomic-layer etching (ALE) techniques.…”
mentioning
confidence: 99%
“…Generally, GaN is etched by inductively coupled plasmareactive ion etching (ICP-RIE). 10,11) Unfortunately, however, plasma readily causes damage to GaN, and there is low etching selectivity between the GaN and the etching mask. The issue of plasma damage has recently been solved by neutral-beam etching (NBE) and atomic-layer etching (ALE) techniques.…”
mentioning
confidence: 99%
“…However, it is difficult to etch deep trenches in GaN. Generally, GaN is etched by inductively coupled plasma reactive-ion etching (ICP-RIE) [10,11]. Unfortunately, however, plasma treatment readily causes damage to GaN, and there is low etching selectivity between the GaN and the etching mask.…”
Section: Introductionmentioning
confidence: 99%
“…It is employed on at least 2 µm thick GaN/ c ‐plane sapphire templates. Usually, dry etching is used with the intention to produce smoothly etched surfaces 10, 11 and a formation of nanostructures on the unmasked area is undesirable. In contrast this contribution aims at finding process parameters on the one hand and sample properties on the other hand by which a high density of nanostructures with an as long as possible length can be achieved on unmasked surfaces.…”
Section: Introductionmentioning
confidence: 99%