2014
DOI: 10.1166/jnn.2014.10190
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Etch Characteristics of Magnetic Tunnel Junction Materials Using Bias Pulsing in the CH<SUB>4</SUB>/N<SUB>2</SUB>O Inductively Coupled Plasma

Abstract: The etch characteristics of magnetic tunneling junction (MTJ) related materials such as CoFeB, MgO, FePt, Ru, and W as hard mask have been investigated as functions of rf pulse biasing, substrate heating, and CH4/N2O gas combination in an inductively coupled plasma system. When CH4/N2O gas ratio was varied, at CH4/N2O gas ratio of 2:1, not only the highest etch rates but also the highest etch selectivity over W could be obtained. By increasing the substrate temperature, the linear increase of both the etch rat… Show more

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