Etch pits in germanium and their relation to hardness

Dale, J.R.; Brice, J.C.

doi:10.1016/0038-1101(61)90064-8

Cited by 15 publications

(3 citation statements)

References 5 publications

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“…Before cutting the wafers all the germanium slices were carefully examined for both the number and shape of etch pits by exposing them to CP-4. Several investigators have reported the occurrence of three different types of etch pits (usually designated as A, B, and C pits) on CP-4 etched germanium surfaces (9)(10)(11)(12)(13)(14). The A pits have a terraced conical shape and correspond to dislocations as shown by Vogel et al (8).…”

Section: Methodsmentioning

confidence: 99%

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The Spreading of Molten Indium Over Germanium

Bergh¹

1963

J. Electrochem. Soc.

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The control over the spreading of molten metals over semiconductor surfaces presents many difficulties in the manufacture of alloy junction transistors. The spreading of molten indium over germanium surfaces has been investigated to gain better understanding about the effect of different factors influencing spreading. The effect of various imperfections in the germanium crystal, rate of temperature rise, size of the indium sphere, preparation of the germanium surface, gaseous ambient, and oxides of the alloying components were evaluated vs. an arbitrarily chosen standard procedure. The most favorable conditions for spreading were obtained by using germanium crystals free of imperfections, slow temperature rise, inert atmosphere, a small amount of germanium oxide, and oxide free indium.Current theories are inadequate to explain our experimental results; their deficiencies are shown in detail. Comparing the results with those of spreading liquid metals over solid metals it is concluded that the anisotropy of the single crystal germanium toward the dissolution in molten indium and the surface roughness influence primarily the geometry of the wetted area, and the most important single factor contributing to spreading is the reduction of germanium oxides by indium probably enhanced by surface migration.

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Section: Methodsmentioning

confidence: 99%

“…Manuscript received Aug. 8,1962; revised manuscript received Nov. 29,1962. This paper was presented at the Houston Meeting, Oct. [9][10][11][12][13]1960.…”

Section: Journal Of the Electrochemical Societymentioning

confidence: 99%

The Spreading of Molten Indium Over Germanium

Bergh¹

1963

J. Electrochem. Soc.

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“…Since the depth of these pits is ~--1-2~, it is tempting to speculate that these pits are due to impurity a n d / o r vacancy clusters. In this connection, it is noteworthy that pits of this type have been observed in Ge crystals where they have been correlated to oxygen content (18). Anticipating that the minute etch pits observed in GaP might be attributable to oxygen, a correlation of oxygen concentration and pit density was sought.…”

Section: P61arity Of Dislocations--since Etchant 3 Has Beenmentioning

confidence: 99%

The Defect Structure of GaP Crystals Grown from Gallium Solutions, Vapor Phase and Liquid Phase Epitaxial Deposition

Saul¹

1968

J. Electrochem. Soc.

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The defect structure of normalGaP crystals grown from gallium solutions, vapor phase and liquid phase epitaxial deposition is described. Etchants have been used to demarcate emergent dislocations, stacking faults, and p‐n and n‐n+ junctions. Crystals grown from gallium solutions are inhomogeneous with respect to defect structure and contain substantial dislocation‐free regions. Evidence is cited which indicates that some dislocations are introduced during growth whereas others are apparently generated at high stress regions during cooling. It is demonstrated that vapor phase epitaxial deposition on normalGaP substrates is capable of yielding nearly dislocation‐free crystals containing no stacking faults. The high density of defects observed in crystals grown on normalGaAs substrates is attributed to the heteroepitaxial mode of growth, in particular, the difference in thermal contraction of the growth layer and substrate on cooling from the growth temperature. normalGaP diodes fabricated by liquid‐phase epitaxy, in contrast to those formed by vapor‐phase epitaxy, do not contain interfacial dislocations at the growth‐substrate interface, i.e., p‐n junction.

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Phase Relationships in Semiconductors

Brice¹

1973

Atomic Diffusion in Semiconductors

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Etch pits in germanium and their relation to hardness

Cited by 15 publications

References 5 publications

The Spreading of Molten Indium Over Germanium

The Spreading of Molten Indium Over Germanium

The Defect Structure of GaP Crystals Grown from Gallium Solutions, Vapor Phase and Liquid Phase Epitaxial Deposition

Phase Relationships in Semiconductors

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