Etch Rate Modification of SiO[sub 2] by Ion Damage

Charavel, Rémy; Raskin, Jean‐Pierre

doi:10.1149/1.2200307

Cited by 16 publications

(10 citation statements)

References 7 publications

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“…5(a). The etching rate of these damaged pore layers could be abruptly increased by the next HF cleaning process [9,10]. This mechanism can be supported by another test in Fig.…”

Section: Failure Analysis and Mechanismsupporting

confidence: 58%

A Study on the Fluorine Effect of Direct Contact Process in High-Doped Boron Phosphorus Silicate Glass (BPSG)

Kim¹,

Choi²,

Kim³

et al. 2013

JSTS:Journal of Semiconductor Technology and Science

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Abstract-The effect of fluorine ions, which can be reacted with boron in high-doped BPSG, is investigated on the contact sidewall wiggling profile in semiconductor process. In the semiconductor device, there are many contacts on p + /n + source and drain region. However these types of wiggling profile is only observed at the n + contact region. As a result, we find that the type of plug implantation dopant can affect the sidewall wiggling profile of contact. By optimizing the proper fluorine gas flow rate, both the straight sidewall profile and the desired electrical characteristics can be obtained. In this paper, we propose a fundamental approach to improve the contact sidewall wiggling profile phenomena, which mostly appear in high-doped BPSG on nextgeneration DRAM products.

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“…5(a). The etching rate of these damaged pore layers could be abruptly increased by the next HF cleaning process [9,10]. This mechanism can be supported by another test in Fig.…”

Section: Failure Analysis and Mechanismsupporting

confidence: 58%

A Study on the Fluorine Effect of Direct Contact Process in High-Doped Boron Phosphorus Silicate Glass (BPSG)

Kim¹,

Choi²,

Kim³

et al. 2013

JSTS:Journal of Semiconductor Technology and Science

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“…It can be observed that simulations are in pretty good agreement with the experimental enhanced etching rate in the depth (thickness of the silicon dioxide). It has been shown in [16] that the nuclear deposited energy is the main factor for etch rate modification and the type of implanted species has a limited influence on the etch rate. The etch rate of implanted silicon dioxide does not change in HF-1% when the nuclear deposited energy is lower than 1x10 23 eV/cm³, and there is a saturation of the etch rate for nuclear deposited energy above 3x10 24 eV/cm³.…”

Section: Simulation and Experimental Resultsmentioning

confidence: 99%

“…The damages created in silicon dioxide enhance the reactivity to hydrofluoric acid (HF) and thus the increase of etch rate [11] - [17]. Selectivity of 3 between implanted and unimplanted silicon dioxide has been demonstrated with the use of wet HF [13 ] [16] and a selectivity of around 200 when vapor phase hydrofluoric acid is used [16].…”

Section: Vhf Etch Of Implanted Silicon Dioxidementioning

confidence: 99%

Anisotropic vapor HF etching of silicon dioxide for Si microstructure release

Passi¹,

Södervall²,

Nilsson³

et al. 2012

Microelectronic Engineering

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Damages are created in a sacrificial layer of silicon dioxide by ion implantation to enhance the etch rate of silicon-dioxide in liquid and vapor phase hydrofluoric acid. The etch rate ratio between implanted and unimplanted silicon dioxide is more than 150 in vapor hydrofluoric acid (VHF). This feature is of interest to greatly reduce the underetch of microelectromechanical systems anchors.Based on the experimentally extracted etch rate of unimplanted and implanted silicon dioxide, the patterning of the sacrificial layer can be predicted by simulation.

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“…involving no water, the presence of water is necessary to trigger the etching [35]. The following equations show how etching takes place.…”

Section: Vapor Phase Hydrofluoric Acid Etchingmentioning

confidence: 99%

Design guidelines for releasing silicon nanowire arrays by liquid and vapor phase hydrofluoric acid

Passi

Dubois

Lecestre

et al. 2013

Microelectronic Engineering

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Etch Rate Modification of SiO[sub 2] by Ion Damage

Cited by 16 publications

References 7 publications

A Study on the Fluorine Effect of Direct Contact Process in High-Doped Boron Phosphorus Silicate Glass (BPSG)

A Study on the Fluorine Effect of Direct Contact Process in High-Doped Boron Phosphorus Silicate Glass (BPSG)

Anisotropic vapor HF etching of silicon dioxide for Si microstructure release

Design guidelines for releasing silicon nanowire arrays by liquid and vapor phase hydrofluoric acid

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