2003
DOI: 10.1109/jmems.2003.820936
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Etch rates for micromachining processing-part II

Abstract: [1070]

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Cited by 874 publications
(617 citation statements)
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“…Based on the fact that zirconium dioxide can be dissolved in hydrofluoric acid (HF) [42] while α-alumina is highly resistant to HF [43], a selective removal of the zirconia phase was achieved by immersing the samples in concentrated HF (Hydrofluoric Acid 40% QP, Panreac, Barcelona, Spain) at room temperature for times comprised between 6 h, 1, 2, 4, 8 and 12 days.…”
Section: Generation Of Nano-roughness and Interconnected Porosity By mentioning
confidence: 99%
“…Based on the fact that zirconium dioxide can be dissolved in hydrofluoric acid (HF) [42] while α-alumina is highly resistant to HF [43], a selective removal of the zirconia phase was achieved by immersing the samples in concentrated HF (Hydrofluoric Acid 40% QP, Panreac, Barcelona, Spain) at room temperature for times comprised between 6 h, 1, 2, 4, 8 and 12 days.…”
Section: Generation Of Nano-roughness and Interconnected Porosity By mentioning
confidence: 99%
“…The native aluminum oxide layer, Al 2 O 3 , overhangs the underlying metal and serves as a mask during the deposition of the second electrode. This layer must be removed afterwards, but since Al 2 O 3 , corundum, is one of the most chemically inert materials [17], removal by direct chemical etching is very difficult. In a refinement, the authors deposited an additional sacrificial layer of SiO 2 and subsequently used etchant for SiO 2 to remove the SiO 2 and Al/Al 2 O 3 layers [16].…”
mentioning
confidence: 99%
“…The same deposition parameters are used as during the first layer to deposit a layer of 1.5 μm. Here the LPCVD SiRN is used because of its chemical inertness, high strength, stability and good thermal properties (Williams and Muller 1996;Gardeniers et al 1996;French et al 1997;Freitag and Richerson 1998;Williams et al 2003;Kaushik et al 2005). In addition, it is biocompatible (Mazzocchi and Bellosi 2008), its surface can be functionalized (Parvais et al 2003;Arafat et al 2004) and the stress in SiRN can be tuned by the deposition parameters (Gardeniers et al 1996;Habermehl 1998) which allows relatively thick layers.…”
Section: Fabrication Outline When Using Standard Silicon Wafersmentioning
confidence: 99%