2000
DOI: 10.1016/s0924-4247(00)00309-5
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Etch rates of (100), (111) and (110) single-crystal silicon in TMAH measured in situ by laser reflectance interferometry

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Cited by 45 publications
(31 citation statements)
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“…The anisotropic etchants etch materials much faster in one direction than in another, exposing the slowest etching crystal planes over time [1,2,4,10,[23][24][25][26][27]. Several kinds of aqueous alkaline solutions such as potassium hydroxide solution (KOH) [23][24][25][26][28][29][30][31][32][33][34][35], tetramethylammonium hydroxide (TMAH) [27,[36][37][38][39][40][41][42][43][44][45], ethylenediamine pyrocatechol water (EDP or EPW) [26,35,46,47], hydrazine [23,48,49], ammonium hydroxide [50], and cesium hydroxide (CsOH) [51] are employed for silicon wet anisotropic etching. Among these etchants, potassium hydroxide (KOH) and tetramethylammonium hydroxide (TMAH) are most frequently used.…”
Section: Introductionmentioning
confidence: 99%
“…The anisotropic etchants etch materials much faster in one direction than in another, exposing the slowest etching crystal planes over time [1,2,4,10,[23][24][25][26][27]. Several kinds of aqueous alkaline solutions such as potassium hydroxide solution (KOH) [23][24][25][26][28][29][30][31][32][33][34][35], tetramethylammonium hydroxide (TMAH) [27,[36][37][38][39][40][41][42][43][44][45], ethylenediamine pyrocatechol water (EDP or EPW) [26,35,46,47], hydrazine [23,48,49], ammonium hydroxide [50], and cesium hydroxide (CsOH) [51] are employed for silicon wet anisotropic etching. Among these etchants, potassium hydroxide (KOH) and tetramethylammonium hydroxide (TMAH) are most frequently used.…”
Section: Introductionmentioning
confidence: 99%
“…1(a)] [11]. Note that the KOH-based texturing produces random standing and tilted pyramids on the LPC Si surface due to anisotropic nature of the etchant on poly-Si films [16], [17]. To enhance rear reflection, a white paint BSR is spray-coated onto the textured Si films until the sample is completely opaque.…”
Section: Methodsmentioning
confidence: 99%
“…The oxide deposition rate was about 1.5 nm/min and the gas flow rate of 18 sccm. After the oxidization and patterning, the residual silicon was removed by an anisotropic etchant, tetramethylammoniumhydroxide (TMAH) + deionized water, at 80°C for 45 min [6]. Secondly, micro-cantilever arrays were deposited with chrome-gold layer using radio frequency (rf ) magnetron sputtering from a gold target at room temperature.…”
Section: Methodsmentioning
confidence: 99%