Etched mirror and groove-coupled GaInAsP/InP laser devices for integrated optics

Coldren, L.A.; Furuya, K.; Miller, B. I.; Rentschler, J. A.

doi:10.1109/jqe.1982.1071404

Cited by 85 publications

(22 citation statements)

References 34 publications

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“…The coupling strength, quantified by the coupling constant T/R, repeats as the gap width is changed by multiples of λ/2, which is known as the rule of λ/2 (23). Therefore, traditional cleavedcoupled cavities, which are made of submillimeter-scale crystals, can be fabricated with micrometer-scale gaps (26,27). This geometric tolerance cannot be applied to cleaved-coupled nanowire lasers with cross-sections comparable to the lasing wavelength because the finite cross-sections of the cavities induce severe diffraction losses at the intercavity gaps.…”

Section: Resultsmentioning

confidence: 99%

Cleaved-coupled nanowire lasers

Gao

Andrews

et al. 2013

Proc. Natl. Acad. Sci. U.S.A.

122

103

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The miniaturization of optoelectronic devices is essential for the continued success of photonic technologies. Nanowires have been identified as potential building blocks that mimic conventional photonic components such as interconnects, waveguides, and optical cavities at the nanoscale. Semiconductor nanowires with high optical gain offer promising solutions for lasers with small footprints and low power consumption. Although much effort has been directed toward controlling their size, shape, and composition, most nanowire lasers currently suffer from emitting at multiple frequencies simultaneously, arising from the longitudinal modes native to simple Fabry-Pérot cavities. Cleaved-coupled cavities, two Fabry-Pérot cavities that are axially coupled through an air gap, are a promising architecture to produce single-frequency emission. The miniaturization of this concept, however, imposes a restriction on the dimensions of the intercavity gaps because severe optical losses are incurred when the cross-sectional dimensions of cavities become comparable to the lasing wavelength. Here we theoretically investigate and experimentally demonstrate spectral manipulation of lasing modes by creating cleaved-coupled cavities in gallium nitride (GaN) nanowires. Lasing operation at a single UV wavelength at room temperature was achieved using nanoscale gaps to create the smallest cleaved-coupled cavities to date. Besides the reduced number of lasing modes, the cleavedcoupled nanowires also operate with a lower threshold gain than that of the individual component nanowires. Good agreement was found between the measured lasing spectra and the predicted spectral modes obtained by simulating optical coupling properties. This agreement between theory and experiment presents design principles to rationally control the lasing modes in cleaved-coupled nanowire lasers.

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Section: Resultsmentioning

confidence: 99%

Cleaved-coupled nanowire lasers

Gao

Andrews

et al. 2013

Proc. Natl. Acad. Sci. U.S.A.

122

103

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“…The PRR-TL includes a gain section, a phase-control section and two ring resonators placed in parallel with slightly different free spectral ranges (FSRs) designed as 200 and 222 GHz, respectively. The laser cavity of the PRR-TL is defined by an etched mirror [22] used as the front mirror and a reflective filter section. More about the structure and design of the etched mirror can be found in Ref.…”

Section: Copyright Cmentioning

confidence: 99%

Wavelength-Routed Switching for 25-Gbit/s Optical Packets Using a Compact Transmitter Integrating a Parallel-Ring-Resonator Tunable Laser and an InGaAlAs EAM

Segawa

Kobayashi

Nakahara

et al. 2014

IEICE Trans. Electron.

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SUMMARYWe describe wavelength-routed switching technology for 25-Gbit/s optical packets using a tunable transmitter that monolithically integrates a parallel-ring-resonator tunable laser and an InGaAlAs electroabsorption modulator (EAM). The transmitter provided accurate wavelength tunability with 100-GHz spacing and small output power variation. A 25-Gbit/s burst-mode optical-packet data was encoded onto the laser output by modulating the integrated EAM with a constant voltage swing of 2 V at 45 • C. Clear eye openings were observed at the output of the 100 GHz-spaced arrayed-waveguide grating with error-free operation being achieved for all packets. The tunable transmitter is very promising for realizing a high-speed, large-port-count and energy-efficient wavelengthrouting switch that enables the forwarding of 100-Gbit/s optical packets.

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“…Furthermore it is also important for high efficiency and low threshold currents laser that etched facets be flat and vertical and therefore a special precaution should be taken as to material selectivity and anisotropy of etching. Techniques using chemical solvent [43,44] inert gas such as Ar [45] and reactive gas such as Cl2 [46] have been extensively studied for both GaAs and InP (Fig 8).…”

Section: Integrated Structures :Materials and Processing Technologies mentioning

confidence: 99%

“…The concept of monolithic integration was introduced by Yariv's group of Pasadena Institute of Technology by first integrating semiconductor laser and a Gunn effect logical element on a SI GaAs substrate [46]. The state-of-the-art OEIC transmitter and receiver which form the basic building block of any photonic system are described below.…”

Section: State-of-the-art Oeic'smentioning

confidence: 99%