Etching and Optical Characteristics in GaAs/GaAlAs Surface Emitting Laser Fabrication Using a Novel Spray Etch

Tanobe, Hiromasa; Koyama, Fumio; Iga, Kenichi

doi:10.1143/jjap.31.1597

Cited by 8 publications

(5 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…We also prepared a control sample without a ferromagnetic layer. Each sample was mounted on fused silica with transparent epoxy and the substrates were removed up to the 400-nm AlGaAs layer by a selective etch (14).…”

mentioning

confidence: 99%

Ferromagnetic Imprinting of Nuclear Spins in Semiconductors

Kawakami,

Kato,

Hanson

et al. 2001

Science

120

View full text Add to dashboard Cite

We examine how a ferromagnetic layer affects the coherent electron spin dynamics in a neighboring gallium arsenide semiconductor. Ultrafast optical pump-probe measurements reveal that the spin dynamics are unexpectedly dominated by hyperpolarized nuclear spins that align along the ferromagnet's magnetization. We find evidence that photoexcited carriers acquire spin-polarization from the ferromagnet, and dynamically polarize these nuclear spins. The resulting hyperfine fields are as high as 9000 gauss in small external fields (less than 1000 gauss), enabling ferromagnetic control of local electron spin coherence.

show abstract

mentioning

confidence: 99%

Ferromagnetic Imprinting of Nuclear Spins in Semiconductors

Kawakami,

Kato,

Hanson

et al. 2001

Science

120

View full text Add to dashboard Cite

show abstract

“…In the previous work, both pump and probe beams radiated from the back side of the sample. To avoid the loss of both pump and probe beams, the usual method was first mounting the measured sample on fused silica with transparent epoxy and then the substrates were removed up to an etching stop layer (400 nm AlGaAs layer) by a selective etch [7]. To avoid the difficulty in preparing such sample, we adopted a new measurement skill, and let both pump and probe beams radiate directly onto the front side of samples without the need for removing the thick substrate portion.…”

Section: Experimental Methodsmentioning

confidence: 99%

Strong ferromagnetic proximity polarization in ferromagnetic metal MnGa/n-type GaAs quantum well junction

Sui

et al. 2017

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

By biasing a ferromagnetic metal MnGa/10 nm-thick, n-type GaAs quantum well (QW) junction from negative to positive, it is found that its spin dynamics at zero magnetic field is composed of two components with opposite signs. One is excited by a circularly polarized pump beam. The other is induced by ferromagnetic proximity polarization (FPP), which is continuously enhanced as the bias increases towards the positive direction. The time-resolved Kerr rotations have also been measured at a magnetic field of 0.9 Tesla. A phase reversion of Larmor precession is observed as the bias passes through +0.5 V. Following simple quantum mechanics, we become aware of the fact that the transmission and reflection rates of electrons at the interface of MnGa/n-type GaAs QW are enhanced by a factor of ν , which is the attempting frequency of electron onto a ferromagnet/semiconductor interface. That gives a reasonable explanation why the FPP effect in our MnGa/n-type GaAs QW junction is greatly enhanced as biasing it into forward direction.

show abstract

“…The sample sizes used in experiments vary from less than 1 cm to full 2 wafers [22], [23]. The fusion pressure reported in the literature varies over a wide range, from relatively small pressures of 3 kPa [17], [18], 30 kPa [24], 100 kPa [25], to 3 MPa [12], [20], [22], [26]. The key factor in the effective application of the force on the samples is its uniformity.…”

Section: Wafer Fusing: Process Descriptionmentioning

confidence: 99%