Etching characteristics and mechanism of Pb(Zr,Ti)O3 thin films in CF4/Ar inductively coupled plasma

Efremov, Alexander; Kim, D.P; Kim, K.T; Kim, C.I

doi:10.1016/j.vacuum.2004.03.013

Cited by 15 publications

(14 citation statements)

References 27 publications

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“…Nanometer slits were also observed at the edges between structures. Compared to PZTs [13] [20], (selectivity ratios of up to 35:1, etching speeds of 0.14 to 0.4 µm/min, and profile angles of ~75 0 ), we conclude that PMN-PT is slightly more renitent to dry etching than PZT. However, according to our experience, profiles of ~100 µ µ µ µm are achievable, with the cost of extended etching times.…”

Section: Drie Technique Conclusionmentioning

confidence: 62%

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PMN–PT (lead magnesium niobate–lead titanate) piezoelectric material micromachining by excimer laser ablation and dry etching (DRIE)

Ivan¹,

Agnus²,

Lambert³

2012

Sensors and Actuators A: Physical

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In the attempt to find the appropriate micromanufacturing technology of PMN-PT (lead magnesium niobate-lead titanate) piezo material, whose MEMS-related applications look promising, two methods are investigated: excimer laser ablation (using KrF gas) and inductively coupled plasma (ICP) dry etching, also known as DRIE (using Ar/C 4 F 8 gases). The paper quantitatively reports the optimal parameters for PMN-PT micromachining and compares both methods. KrF excimer laser ablation threshold fluence is of 14 J/cm², the etching rate may reach 100 µm/min (50 nm/pulse) but the ablated surfaces are cone-shaped restricting thus the method to cutting/drilling 2D shapes. Excimer ablation method is found to be more convenient for rapid prototyping with less precise features requirements (>10 µm). On the other hand DRIE method on PMN-PT is time-consuming, requires a hard mask deposition but is cleaner and more precise. Dry etching maximum recorded speed is of 0.19 µm/min. The nickel hard mask selectivity varies around 8:1. In exchange this method provides flatter surfaces with no etched material redeposition.

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Section: Drie Technique Conclusionmentioning

confidence: 62%

“…Dry etching of piezoelectric materials is not new issue, researches being reported in quartz [11], AlN [12], LiNbO 3 and PZT ceramics [13] where etching is mainly obtained by a rather physical sputtering with insignificant chemical contribution. Quite similar to PZT, the PMN-PT should be also compatible with DRIE.…”

Section: Introductionmentioning

confidence: 99%

PMN–PT (lead magnesium niobate–lead titanate) piezoelectric material micromachining by excimer laser ablation and dry etching (DRIE)

Ivan¹,

Agnus²,

Lambert³

2012

Sensors and Actuators A: Physical

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“…The plasma density increases with the input power, and is on the orders of 10 19 m −3 in Ar discharge, and 10 18 m −3 in Ar/CF 4 discharge. In conventional ICP, the plasma density is on the orders of 10 17 –10 18 m −3 in Ar discharge, and 10 16 m −3 in Ar/CF 4 discharge [ 1 , 5 , 35 ]. In this ICP, it was 10 to 100 times higher than the conventional ICP.…”

Section: Resultsmentioning

confidence: 99%

“…Therefore, it is expected to be applied to high-speed processes. The plasma density in the Ar/CF 4 discharge is lower than that in Ar discharge because of electron loss due to electron attachment to various kinds of molecules [ 35 , 36 , 37 , 38 ]. When an electronegative gas such as CF 4 is fed into the chamber, the potential structure in the sheath has two-stages.…”

Section: Resultsmentioning

confidence: 99%

Silicon Wafer Etching Rate Characteristics with Burst Width Using 150 kHz Band High-Power Burst Inductively Coupled Plasma

et al. 2021

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The high-speed etching of a silicon wafer was experimentally investigated, focusing on the duty factor of 150 kHz band high-power burst inductively coupled plasma. The pulse burst width was varied in the range of 400–1000 µs and the repetition rate was set to 10 Hz. A mixture of argon (Ar) and carbon tetrafluoride (CF4) gas was used as the etching gas and injected into the vacuum chamber. The impedance was changed with time, and the coil voltage and current were changed to follow it. During the discharge, about 3 kW of power was applied. The electron temperature and plasma density were measured by the double probe method. The plasma density in the etching region was 1018–1019 m−3. The target current increased with t burst width. The etching rate of Ar discharge at burst width of 1000 µs was 0.005 µm/min. Adding CF4 into Ar, the etching rate became 0.05 µm/min, which was about 10 times higher. The etching rate increased with burst width.

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“…There were several works reported on the dry etching properties of the PZT thin films using fluorine-, chlorine-, and bromine-based binary gas mixtures. [3][4][5][6][7][8][9] All these works give similar results on the behavior of the PZT etching rate versus the main operating parameters (input power, bias power, and gas pressure), but different results on the effects of gas mixing ratios. In particular, Chung 3) and Efremov et al 4) reported an almost constant PZT etching rate up to 80% Ar in Cl 2 /Ar plasmas.…”

Section: Introductionmentioning

confidence: 83%

Etching Characteristics and Mechanisms of Pb(Zr,Ti)O₃, Pt, and SiO₂ in an Inductively Coupled HBr/Cl₂ Plasma

Kwon¹,

Efremov

Kim³

et al. 2011

Jpn. J. Appl. Phys.

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An investigation of the etching characteristics of Pb(Zr,Ti)O3 (PZT), Pt, and SiO2 in an inductively coupled HBr/Cl2 plasma as functions of gas mixing ratio at constant total gas pressure (6 mTorr), gas flow rate (40 sccm), input power (700 W), and bias power (300 W) was carried out. It was found that the PZT etching rate exhibits a maximum of 23.8 nm/min at 60% Cl2, while the highest PZT/SiO2 and PZT/Pt etching selectivities correspond to 20 and 40–60% Cl2, respectively. Plasma diagnostics by a double Langmuir probe and a global (zero-dimensional) plasma model provided the data on plasma parameters, densities and fluxes of plasma active species. It was considered that the PZT etching process appears in the neutral-flux-limited or transitional regime of an ion-assisted chemical reaction, and the nonmonotonic behavior of the PZT etch rate may result from the change in reaction probability.

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Etching characteristics and mechanism of Pb(Zr,Ti)O3 thin films in CF4/Ar inductively coupled plasma

Cited by 15 publications

References 27 publications

PMN–PT (lead magnesium niobate–lead titanate) piezoelectric material micromachining by excimer laser ablation and dry etching (DRIE)

PMN–PT (lead magnesium niobate–lead titanate) piezoelectric material micromachining by excimer laser ablation and dry etching (DRIE)

Silicon Wafer Etching Rate Characteristics with Burst Width Using 150 kHz Band High-Power Burst Inductively Coupled Plasma

Etching Characteristics and Mechanisms of Pb(Zr,Ti)O₃, Pt, and SiO₂ in an Inductively Coupled HBr/Cl₂ Plasma

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Etching characteristics and mechanism of Pb(Zr,Ti)O3 thin films in CF4/Ar inductively coupled plasma

Cited by 15 publications

References 27 publications

PMN–PT (lead magnesium niobate–lead titanate) piezoelectric material micromachining by excimer laser ablation and dry etching (DRIE)

PMN–PT (lead magnesium niobate–lead titanate) piezoelectric material micromachining by excimer laser ablation and dry etching (DRIE)

Silicon Wafer Etching Rate Characteristics with Burst Width Using 150 kHz Band High-Power Burst Inductively Coupled Plasma

Etching Characteristics and Mechanisms of Pb(Zr,Ti)O3, Pt, and SiO2 in an Inductively Coupled HBr/Cl2 Plasma

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Product

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Etching Characteristics and Mechanisms of Pb(Zr,Ti)O₃, Pt, and SiO₂ in an Inductively Coupled HBr/Cl₂ Plasma