2007
DOI: 10.1016/j.mee.2006.12.007
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Etching characteristics and plasma-induced damage of Ba0.65Sr0.35TiO3 thin films etched in CF4/Ar/O2 plasma

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Cited by 9 publications
(1 citation statement)
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“…The etch rate is slower than that of Cl-based etch gas because the surface reaction product F-based compounds have a high melting point and boiling point (as is illustrated in Table 2). However, the etch rate could be tailored by controlling the addition of oxygen [35] . The etch rate may decrease by increasing F-based etch gas because it is easy to form fluorocarbon polymer film on the a-IGZO film with a large amount of F-based etch gas that stops further etching.…”
Section: F-based Etch Gasmentioning
confidence: 99%
“…The etch rate is slower than that of Cl-based etch gas because the surface reaction product F-based compounds have a high melting point and boiling point (as is illustrated in Table 2). However, the etch rate could be tailored by controlling the addition of oxygen [35] . The etch rate may decrease by increasing F-based etch gas because it is easy to form fluorocarbon polymer film on the a-IGZO film with a large amount of F-based etch gas that stops further etching.…”
Section: F-based Etch Gasmentioning
confidence: 99%