2007
DOI: 10.1143/jjap.46.60
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Etching Damage in Diamond Studied Using an Energy-Controlled Oxygen Ion Beam

Abstract: Recent work has focused on the presence of anisotropies in cosmic ray arrival directions for energies above 2 × 10 19 eV. Here, we examine the results in some detail from the standpoint of identifying likely extra-galactic sources. Of the types of galaxy studied, those in collision, and which are within 10 Mpc of the Milky Way, are the strongest contenders. * Since deceased.

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Cited by 10 publications
(6 citation statements)
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“…One reason involves the use of anisotropic wet processes, such as KOH processes, which are frequently utilised to form Si trench structures but are not effective for diamond because of its chemical stability. The other reason is that plasma processes currently used for diamond etching exhibit low selectivity (diamond/masks) 20 , and plasma-induced damage to diamond 21 , 22 leads to the deterioration in the device’s performance 23 . Hence, it is crucial to develop a highly selective non-plasma process for diamond etching.…”
Section: Introductionmentioning
confidence: 99%
“…One reason involves the use of anisotropic wet processes, such as KOH processes, which are frequently utilised to form Si trench structures but are not effective for diamond because of its chemical stability. The other reason is that plasma processes currently used for diamond etching exhibit low selectivity (diamond/masks) 20 , and plasma-induced damage to diamond 21 , 22 leads to the deterioration in the device’s performance 23 . Hence, it is crucial to develop a highly selective non-plasma process for diamond etching.…”
Section: Introductionmentioning
confidence: 99%
“…However, the plasma process causes a deterioration of device performance by generating defects on the diamond surfaces and sub-surfaces and by surface roughening [12][13][14][15]. Therefore, the development of non-plasma processes for etching diamond is essential.…”
Section: Introductionmentioning
confidence: 99%
“…6 Subsequently, we have investigated the plasma processes for plasma etching of dielectric materials and diamonds using in vacuo and in line ESR techniques. [7][8][9][10][11][12][13] Recently, the surface treatment of soft-and bio-material using atmospheric pressure plasmas has attracted much attention. For example, there is considerable interest in changing the surface hydrophobicity of polytetrafluoroethylene (PTFE) using treatments such as UV-radiation under vacuum at room temperature, which was studied by Rasoul et al, 14 or oxygen low-pressure plasma exposure examined by Vandencasteele et al, 15,16 Carbone et al, 17 and Milella et al 18 In addition, surface modification using atmospheric pressure He plasma was studied by Zettsu et al 19 Physical and chemical modification of the PTFE surface has also reported by other researchers.…”
mentioning
confidence: 99%