Etching Damages on AlGaN, GaN and InGaN Caused by Hybrid Inductively Coupled Plasma Etch and Photoenhanced Chemical Wet Etch by Schottky Contact Characterizations

Fang, C. Y.; Huang, Weng Jung; Chang, Edward Yi; Lin, Chia Feng; Feng, M. S.

doi:10.1143/jjap.42.4207

Cited by 22 publications

(11 citation statements)

References 12 publications

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“…The higher reverse leakage current of an ST-LED might be caused by surface-damage-induced leakage of current during the ICP dry mesa etching process. 14,15 In the PEC wet-etched WME-LED structure, the mesa region was defined by the wet-etching process to avoid ICP plasma damage on the GaN sidewall surface. A higher light output power and an etching surface free from plasma damage can be attained from this WME-LED fabricated PEC wet mesa etching process.…”

Section: Resultsmentioning

confidence: 99%

Wet Mesa Etching Process in InGaN-based Light Emitting Diodes

Yang¹,

Lin²,

Jiang³

et al. 2008

Electrochem. Solid-State Lett.

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A photoelectrochemical wet mesa etching ͑WME͒ process was used to fabricate InGaN-based light emitting diodes ͑LEDs͒ as a substitute for the conventional plasma mesa dry etching process. The p-type GaN:Mg layer, InGaN active layer, and n-type GaN:Si layer were etched through a sequential photoelectrochemical oxidation and oxide-removing process to define the mesa region. The higher lateral wet-etching rate ͑ϳ3.4 m/h͒ of the InGaN active layer was observed to form a wider undercut structure which has 42.7% light output power enhancement compared to a conventional LED fabricated with the plasma dry etching process. The reverse current of a WME-LED was suppressed by avoiding plasma damage during the dry mesa etching process.

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Section: Resultsmentioning

confidence: 99%

Wet Mesa Etching Process in InGaN-based Light Emitting Diodes

Yang¹,

Lin²,

Jiang³

et al. 2008

Electrochem. Solid-State Lett.

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“…However, it should be noted that Bardwell used material grown by molecular beam epitaxy, whereas in this work, the MOCVD technique is used. Fang et al 14 reported extremely smooth etched surfaces, although the etch rate was <1 nm/ min, making it unsuitable for device fabrication. Our investigation has shown that smooth morphologies are dependent on solution concentration, UV intensity, and the area of catalyst present on the surface.…”

Section: Etching Of Nominally Undoped Ganmentioning

confidence: 99%

Investigations on Electrode-Less Wet Etching of GaN Using Continuous Ultraviolet Illumination

Green

Tan

Houston

et al. 2007

Journal of Elec Materi

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“…Several groups have reported an increase in surface roughness and sheet resistance after ICP-RIE. 22,23) Although there have been attempts to recover the degraded electrical properties by performing treatments after etching, the recovered properties were not good as those of the as-grown materials. [23][24][25] Considering the above background, we focused on selective thermal etching for obtaining high selectivity with relatively low damage.…”

Section: Introductionmentioning

confidence: 99%

“…22,23) Although there have been attempts to recover the degraded electrical properties by performing treatments after etching, the recovered properties were not good as those of the as-grown materials. [23][24][25] Considering the above background, we focused on selective thermal etching for obtaining high selectivity with relatively low damage. In this method, etching is conducted with high-temperature annealing in a mixed hydrogen and ammonia atmosphere.…”

Section: Introductionmentioning

confidence: 99%

Impact of selective thermal etching in mixed H₂/NH₃ atmosphere on crystal quality of AlGaN/GaN heterostructures

Yoshiya

Hoshi

Sugiyama

et al. 2021

Jpn. J. Appl. Phys.

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We investigated the impact of selective thermal etching in a mixed hydrogen and ammonia atmosphere on the crystal quality and electrical characteristics of Ga- and N-polar AlGaN/GaN heterostructures. It was revealed that the etching rate of N-polar GaN is lower than that of Ga-polar GaN under our experimental conditions, and they showed a similar dependence on process temperature with almost the same activation energies. We demonstrated the use of a thin AlGaN layer as a selective etching stopper for both Ga- and N-polarity. The AlGaN stoppers exhibited a smooth surface after etching the GaN layer above them. As for the electrical characteristics, there was no significant degradation in the mobility of the two-dimensional electron gas. The results indicate that selective thermal etching is a promising technique for device fabrication and is especially suitable for precise GaN layer removal when GaN-based devices are fabricated with an epitaxial layer transfer technique.

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Etching Damages on AlGaN, GaN and InGaN Caused by Hybrid Inductively Coupled Plasma Etch and Photoenhanced Chemical Wet Etch by Schottky Contact Characterizations

Cited by 22 publications

References 12 publications

Wet Mesa Etching Process in InGaN-based Light Emitting Diodes

Wet Mesa Etching Process in InGaN-based Light Emitting Diodes

Investigations on Electrode-Less Wet Etching of GaN Using Continuous Ultraviolet Illumination

Impact of selective thermal etching in mixed H₂/NH₃ atmosphere on crystal quality of AlGaN/GaN heterostructures

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Etching Damages on AlGaN, GaN and InGaN Caused by Hybrid Inductively Coupled Plasma Etch and Photoenhanced Chemical Wet Etch by Schottky Contact Characterizations

Cited by 22 publications

References 12 publications

Wet Mesa Etching Process in InGaN-based Light Emitting Diodes

Wet Mesa Etching Process in InGaN-based Light Emitting Diodes

Investigations on Electrode-Less Wet Etching of GaN Using Continuous Ultraviolet Illumination

Impact of selective thermal etching in mixed H2/NH3 atmosphere on crystal quality of AlGaN/GaN heterostructures

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Impact of selective thermal etching in mixed H₂/NH₃ atmosphere on crystal quality of AlGaN/GaN heterostructures