Etching mechanisms of HfO2, SiO2, and poly-Si substrates in BCl3 plasmas

Sungauer, E.; Pargon, E.; Mellhaoui, X.; Ramos, R.; Cunge, G.; Vallier, L.; Joubert, O.; Lill, T.

doi:10.1116/1.2781550

Cited by 51 publications

(36 citation statements)

References 18 publications

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“…These spectra intensity on the as-deposition and BCl 3 /Ar plasma were closely similar due to volatile etching by-product. As the BCl 3 content in the BCl 3 /Ar plasma increases, the intensity of this peak also decreases [10,[13][14][15][16]. Therefore, this conclusion is in good agreement with the data of Fig.…”

Section: (-V) (Nm/min)supporting

confidence: 91%

Dry Etching Characteristics of TiN Thin Films in BCl₃-Based Plasma

Woo¹,

Park²,

Kim

2011

Transactions on Electrical and Electronic Materials

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We investigated the etching characteristics of titanium nitride (TiN) thin film in BCl 3 /Ar inductively coupled plasma. The etching parameters were the gas mixing ratio, radio frequency (RF) power, direct current (DC)-bias voltages and process pressures. The standard conditions were as follows: total flow rate = 20 sccm, RF power = 500 W, DCbias voltage = -100 V, substrate temperature = 40℃, and process pressure = 15 mTorr. The maximum etch rate of TiN thin film and the selectivity of TiN to Al 2 O 3 thin film were 54 nm/min and 0.79. The results of X-ray photoelectron spectroscopy showed no accumulation of etch byproducts from the etched surface of TiN thin film. The TiN film etch was dominated by the chemical etching with assistance by Ar sputtering in reactive ion etching mechanism, based on the experimental results.

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Section: (-V) (Nm/min)supporting

confidence: 91%

Dry Etching Characteristics of TiN Thin Films in BCl₃-Based Plasma

Woo¹,

Park²,

Kim

2011

Transactions on Electrical and Electronic Materials

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“…The intensity of each peak was decreased. This can be explained by the fact that N-bonds can be easily broken by the N 2 addition to the BCl 3 /Ar plasma [11][12][13].…”

Section: Rf Power (W) Etch Rate (Nm/min) Selectivitymentioning

confidence: 99%

The Dry Etching Properties on TiN Thin Film Using an N₂/BCl₃/Ar Inductively Coupled Plasma

Woo¹,

Joo²,

Park³

et al. 2011

Transactions on Electrical and Electronic Materials

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In this work, we present a study regarding the etching characteristics on titanium nitride (TiN) thin films using an inductively coupled plasma system. The TiN thin film was etched using a N 2 /BCl 3 /Ar plasma. The studied etching parameters were the gas mixing ratio, the radio frequency (RF) power, the direct current (DC)-bias voltages, and the process pressures. The baseline conditions were as follows: RF power = 500 W, DC-bias voltage = -150 V, substrate temperature = 40℃, and process pressure = 15 mTorr. The maximum etch rate and the selectivity of the TiN to the SiO 2 thin film were 62.38 nm/min and 5.7, respectively. The X-ray photoelectron spectroscopy results showed no accumulation of etching byproducts from the etched surface of the TiN thin film. Based on the experimental results, the etched TiN thin film was obtained by the chemical etching found in the reactive ion etching mechanism.

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“…[42][43][44] However, Cl-based plasmas only are well adapted to chemically etch this material since F-containing chemistries lead to the formation of nonvolatile hafnium fluorides. Several gas mixtures have been investigated to etch HfO 2 high-k gate dielectric.…”

Section: B Etching Of Blanket Hfo 2 Wafersmentioning

confidence: 99%

“…The second plasma that is actively studied 44,46,47 for HfO 2 etching at room temperature is the BCl 3 -based chemistry. Low pressure pure BCl 3 plasmas at low bias voltage etch HfO 2 with a good selectivity toward the silicon substrate, thanks to the formation of a BCl x polymer on SiO 2 ͑and Si͒ which stops etching reactions.…”

Section: B Etching Of Blanket Hfo 2 Wafersmentioning

confidence: 99%

Plasma reactor dry cleaning strategy after TiN, TaN and HfO2 etching processes

Ramos

Cunge

Joubert

2008

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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The authors have investigated the etch chamber recovery after TiN, TaN, and HfO 2 metal gate etching processes. The deposits formed on the reactor walls after etching these materials in various chemistries have been analyzed by x-ray photoelectron spectroscopy. They found that after a complete polysilicon/metal/high-k gate stack patterning process, the reactor walls are typically covered by a composite layer such as SiOCl x -MO -HfBCl x ͑where M is the metal͒. The SiOCl x layer is deposited on the reactor walls during silicon etching ͑HBr/ Cl 2 / O 2 plasma͒; it is subsequently covered by a halogen-rich metal oxide layer during the metal etch step and, finally, by a BCl x polymer containing traces of Hf deposited during HfO 2 etching ͑in a BCl 3 plasma͒. They have then investigated the best plasma chemistry to clean the reactor walls after these processes. In particular, they have analyzed the efficiency of several plasma cleaning chemistries to remove each metal from the reactor walls. This allowed them to conclude that after a metal gate etching process, a two step cleaning strategy is required in most cases to remove the deposit from the reactor walls. A Cl 2 plasma is first used to remove the HfBCl x layer and the Ta coatings ͑in the case of TaN etching͒, and it is followed by a SF 6 / O 2 plasma that is able to remove Ti and SiOCl x deposits from the reactor walls. This two step cleaning strategy will always restore clean chamber conditions before processing the next wafer, thus ensuring a good wafer-to-wafer reproducibility.

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Etching mechanisms of HfO2, SiO2, and poly-Si substrates in BCl3 plasmas

Cited by 51 publications

References 18 publications

Dry Etching Characteristics of TiN Thin Films in BCl₃-Based Plasma

Dry Etching Characteristics of TiN Thin Films in BCl₃-Based Plasma

The Dry Etching Properties on TiN Thin Film Using an N₂/BCl₃/Ar Inductively Coupled Plasma

Plasma reactor dry cleaning strategy after TiN, TaN and HfO2 etching processes

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Etching mechanisms of HfO2, SiO2, and poly-Si substrates in BCl3 plasmas

Cited by 51 publications

References 18 publications

Dry Etching Characteristics of TiN Thin Films in BCl3-Based Plasma

Dry Etching Characteristics of TiN Thin Films in BCl3-Based Plasma

The Dry Etching Properties on TiN Thin Film Using an N2/BCl3/Ar Inductively Coupled Plasma

Plasma reactor dry cleaning strategy after TiN, TaN and HfO2 etching processes

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Dry Etching Characteristics of TiN Thin Films in BCl₃-Based Plasma

Dry Etching Characteristics of TiN Thin Films in BCl₃-Based Plasma

The Dry Etching Properties on TiN Thin Film Using an N₂/BCl₃/Ar Inductively Coupled Plasma