2000
DOI: 10.1109/84.870065
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Etching methodologies in <111>-oriented silicon wafers

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Cited by 75 publications
(69 citation statements)
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“…1d). Wet chemical etching can be either isotropic (Schwartz and Robbins 1976) or anisotropic (Bean 1978;Sugiyama et al 1986;Oosterbroek et al 2000), resulting in channel cross sections as shown in Fig. 4(1,2).…”
Section: Silicon Etching Methodsmentioning
confidence: 99%
“…1d). Wet chemical etching can be either isotropic (Schwartz and Robbins 1976) or anisotropic (Bean 1978;Sugiyama et al 1986;Oosterbroek et al 2000), resulting in channel cross sections as shown in Fig. 4(1,2).…”
Section: Silicon Etching Methodsmentioning
confidence: 99%
“…4.21 shows some possible structures that are realizable in (111) silicon. For micro fluid application, these structures are of great interests [23]. …”
Section: Bulk Micromachining Of (111) Siliconmentioning
confidence: 99%
“…At early times, this was indeed true. However, with the invention and continuous improving of Deep Reactive Ion Etching (DRIE) process, more and more (111) silicon wet etching process are developed [21][22][23][60][61]. Nowadays, (111) wafer has become one of the most useful substrate for MEMS fabrication.…”
Section: Bulk Micromachining Of (111) Siliconmentioning
confidence: 99%
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“…The pit typically forms following the anisotropic etch characteristics of crystalline silicon in hydroxide-based solutions (Oosterbroek et al, 2000;Berenschot et al, 2009). Even though (Mihalcea et al, 2000) (reprinted with permission, copyright The Electrochemical Society 2000).…”
Section: Introductionmentioning
confidence: 99%