Etching methods for indium oxide/tin oxide films

Bradshaw, Geoffrey K.; Hughes, Alfred J.

doi:10.1016/0040-6090(76)90087-0

Cited by 48 publications

(21 citation statements)

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“…Since the very little is known about the etching properties of Ge-doped In 2 O 3 , the optimum solution for etching is not known for Ge-doped In 2 O 3 films. However, a variety of solutions has been proposed for ITO, for example, HI, 18,20) HF, 20) HCl, 16,19) HCl+FeCl 3 , 21) HCl+HNO 3 , 12) H 2 SO 4 and H 3 PO 4 . 16,19) In this study, a dilute solution of hydrochloric acid and nitric acid was used since it is a wellknown solution.…”

Section: Etching Propertymentioning

confidence: 99%

“…[10][11][12][13][14][15] The etching property of ITO has also been investigated. 13,[16][17][18][19][20][21] The etching rate is enhanced when the microstructure of ITO consists of grains embedded in an amorphous matrix. 16) However, the amorphous ITO films were difficult to prepare by magnetron sputtering, so they were prepared by ion beam sputtering.…”

Section: Introductionmentioning

confidence: 99%

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Properties of Germanium-Doped Indium Oxide Thin Films Prepared by DC Magnetron Sputtering

Mizuno¹,

Miyamoto

2000

Jpn. J. Appl. Phys.

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Ge-doped indium oxide (In 2 O 3 ) thin films were prepared by dc magnetron sputtering. The electrical resistivity, 1.6 × 10 −4 ·cm, of the film deposited at 200 • C was obtained at 5.5% Ge doping. This was comparable with that of ITO (tin-doped In 2 O 3 ) films. Furthermore, amorphous films with Ge content higher than 5.0% were obtained when the substrate temperature was 20 • C, while they were obtained with Ge content higher than 7.0% when the substrate temperature was 200 • C. The electrical resistivity of 6.0% Ge-doped amorphous In 2 O 3 film deposited at 20 • C is 4.1 × 10 −4 ·cm. The etching rate of the film by 5% HCl is 1400 Å/min and is nine times as high as that of ITO films.

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Section: Etching Propertymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Properties of Germanium-Doped Indium Oxide Thin Films Prepared by DC Magnetron Sputtering

Mizuno¹,

Miyamoto

2000

Jpn. J. Appl. Phys.

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“…1a and b). The procedures used for the surface preparation were similar to those implemented by Bradshaw 37 and Kim: 38 the glass plate (2.5 cm Â 2.5 cm Â 1.1 mm) containing the ITO lm (nominal z 250 nm) was partially covered with tape and the remaining surface being coated with enamel. Aer removing the tape, the plate was placed into a glass ask containing HCl solution and Zn powder, and kept for 15 minutes in an ultrasonic bath.…”

Section: Partial Removal Of the Ito Lm And Cleaningmentioning

confidence: 99%

Synthesis and evaluation of a PVDF–PT3MA–Zn2SiO4:Mn hybrid polymeric composite for optical device applications

et al. 2014

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A new hybrid organic/inorganic composite consisting of poly(3-thiophene methyl acetate) (PT3MA), poly(vinylidene fluoride) (PVDF) and manganese-doped zinc silicate (Zn 2 SiO 4 :Mn) has been synthesized and applied for the fabrication of an optical device. Recrystallized PVDF was used as a host matrix for the PT3MA polymer and Zn 2 SiO 4 :Mn inorganic compound. The active layer was deposited on an indium-tinoxide (ITO)-coated glass substrate by the drop casting technique. A spin-coating method was also used for morphological comparison purposes. The synthesized material as well as the device (aluminium electrodes/PVDF-PT3MA-Zn 2 SiO 4 :Mn/ITO/glass) was characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), energy dispersive X-ray spectroscopy (EDX), dark current-voltage (I-V) characteristic curves, absorbance and photoluminescence (PL) spectroscopy. The results show spherical-and irregular-shaped microparticles both dispersed on and within the PVDF matrix, which correspond to PT3MA and Zn 2 SiO 4 :Mn, respectively. The hybrid composite shows strong luminescence at z525 nm superimposed by a broadband between 600 and 800 nm, originating from the Zn 2 SiO 4 :Mn radiative transitions and from the recombination of photogenerated carriers at PT3MA. At room temperature, the device presented semiconductor behaviour typically observed for photodetectors and a DC electrical conductivity of z0.37 mS cm À1.

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“…Hydroiodic acid was used as the FTO etchant and the patterned substrates were cleaned using acetone and isopropyl alcohol. 9 The cleaned substrate was loaded in a vacuum chamber for electron beam evaporation of TiO 2 . The substrate was placed at a glancing angle of 85 and the distance between the TiO 2 source and the substrate was 30 cm.…”

Section: Substrate Fabricationmentioning

confidence: 99%