Etching of Silicon Dioxide with Gas Phase HF and Water: Initiation, Bulk Etching, and Termination.

Montaño-Miranda, Gerardo; Muscat, Anthony J.

doi:10.4028/www.scientific.net/ssp.134.3

Cited by 1 publication

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References 15 publications

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“…H–Si(100) demonstrated a slightly lower selectivity of 18.5%. Thus, in addition to their potential capability of being intermittently redosed directly into the ALD reactor when selectivity wains (after etching away accumulated NGS Al 2 O 3 /TMA and reforming the halogen-reactive Si–H surface using either a vapor-phase, plasma-based, or atomic layer etching (ALE) method of Si–OH − ), the halogenated substrates also exhibit a higher degree of ALD inhibition than that of H–Si(100).…”

Section: Resultsmentioning

confidence: 99%

Vapor-Phase Halogenation of Hydrogen-Terminated Silicon(100) Using N-Halogen-succinimides

Raffaelle,

Wang,

Shestopalov

2023

ACS Appl. Mater. Interfaces

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The focus of this study was to demonstrate the vapor-phase halogenation of Si(100) and subsequently evaluate the inhibiting ability of the halogenated surfaces toward atomic layer deposition (ALD) of aluminum oxide (Al2O3). Hydrogen-terminated silicon ⟨100⟩ (H–Si(100)) was halogenated using N-chlorosuccinimide (NCS), N-bromosuccinimide (NBS), and N-iodosuccinimide (NIS) in a vacuum-based chemical process. The composition and physical properties of the prepared monolayers were analyzed by using X-ray photoelectron spectroscopy (XPS) and contact angle (CA) goniometry. These measurements confirmed that all three reagents were more effective in halogenating H–Si(100) over OH–Si(100) in the vapor phase. The stability of the modified surfaces in air was also tested, with the chlorinated surface showing the greatest resistance to monolayer degradation and silicon oxide (SiO2) generation within the first 24 h of exposure to air. XPS and atomic force microscopy (AFM) measurements showed that the succinimide-derived Hal-Si(100) surfaces exhibited blocking ability superior to that of H–Si(100), a commonly used ALD resist. This halogenation method provides a dry chemistry alternative for creating halogen-based ALD resists on Si(100) in near-ambient environments.

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