Etching submicrometer trenches by using the Bosch process and its application to the fabrication of antireflection structures

Abstract

This paper reports solutions to the issues of profile control, microloading effect and suppression of the sidewall roughness of submicrometer trenches by modifying the regular conditions of the Bosch process that is often employed in the inductively coupled plasma (ICP) deep reactive ion etching (DRIE) system. Additionally, under the modified processing conditions, a high efficient antireflection structure can be fabricated.

Silicon-Based Nanowire MOSFETs: From Process and Device Physics to Simulation and Modeling

“…The active area is defined by a high resolution photo lithography on an oxide hardmask. The Bosch cycle technique (Chang et al, 2005) was employed to create a periodic sidewall profile by balancing the ICP etch and passivation step in each cycle. After the first etching phase, the patterned bulk-Si is first masked by a C 4 F 8 -based resistant polymer before the subsequent SF 6 plasma etches in the unprotected region.…”

Design and Fabrication of a Scanning Near-Field Microscopy Probe with Integrated Zinc Oxide Photoconductive Antennas for Local Terahertz Spectroscopy

“…The SiO 2 layer is patterned by photolithography and wet etching using BHF to make probe patterns. The probe patterns are defi ned by deep reactive ion etching (deep-RIE) of silicon using the typical steps of the Bosch process (15) at a depth of 40 µm (Fig. 3(e)).…”

Fabrication of MEMS components using ultrafine-grained aluminium alloys

“…Actually, micro heat exchangers can be applied in many important fields [ 2 ] where lightweight, small heat exchangers are required. One way to make a micro heat exchanger is to perform deep reactive ion etching (DRIE) on silicon wafers to get the micro heat exchanger components with micro scaled patterns [3]. An alternative method to produce micro heat exchangers uses the silicon chips with micro scale patterns by DRIE as a mould and transfers the patterns to a polymer by hot embossing [ 4 ].…”