Ethanol gas sensing performance of electrochemically anodized freestanding porous SiC

Milovanov, Y.S.; Skryshevsky, V. A.; Gavrilchenko, I.V.; Kostiukevych, O.M.; Gryn, Svitlana; Алексеев, С. А.

doi:10.1016/j.diamond.2018.11.008

Cited by 12 publications

(6 citation statements)

References 33 publications

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“…113 The porous silicon carbide based ethanol sensor produced the response/ recovery time of 1.41/0.95 min. 114 A 5 nm thick Pt decorated SiC exhibited high selectivity towards the target gas hydrogen with the high response of 44.48% and less than 7% for other gases. For 100ppm H 2 , the sensor exhibited response/recovery time of 15 s/40 s at 330 °C and also maintained high stability with the same response for 100 d. 115 SiC fet based sensors.-A field effect transistor based on SiC with two gate materials (Pt, Ir) was developed as a methanol gas sensor.…”

Section: Wideband Semiconductor Gas Sensormentioning

confidence: 99%

Review—Semiconductor Materials and Devices for Gas Sensors

Raju¹,

Li²

2022

J. Electrochem. Soc.

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Gas sensors are frequently used for detecting toxic gases and vapors for environmental control, industrial monitoring, and household safety. Semiconductor conductivity can be modified by doping or fine-tuned by applying an electric or magnetic field in an ultra-wide range (10-7 S/cm to 102 S/cm). The conduction of semiconductor is significantly raised or reduced upon the exposure to external conditions, such as temperature variation, light, heat, mechanical stress, or chemicals. Thus, semiconductors are excellent materials for sensors and the device structures are critical for sensing performance. The commonly used semiconductors materials include Si, Ge, III-V, and metal oxide semiconductors. Recently carbon-based materials gain signification attention due to their unique electrical, optical and mechanical properties. There are two major semiconductor gas sensors: resistor-based and FET-based sensors. In this review, the semiconductor materials, sensor device structure as well as gas sensing mechanisms will be systematically categorized, described and explored, with the focus on metal oxides, GaN, SiC, 2D-TMD and carbon-based gas sensors. The recent progress in new semiconductor gas sensors will be thoroughly reviewed and summarized, with a hope to show the trend in semiconductor gas sensor technology.

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Section: Wideband Semiconductor Gas Sensormentioning

confidence: 99%

Review—Semiconductor Materials and Devices for Gas Sensors

Raju¹,

Li²

2022

J. Electrochem. Soc.

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“…The EIS test was performed to evaluate the resistivity between the electrode surface and the electrolyte, that is, the size of the semicircle profile of the Nyquist plot positively expressed the relationship between the charge transfer efficiencies in the nanocomposites. 16 Fig. 1b shows the EIS result of the pure SnO 2 and SCISO NCs.…”

Section: Characterizationmentioning

confidence: 99%

Novel synthesis of ternary nanocomposites with β-SiC fibers, SnO₂, and In₂O₃ for atmospheric gas sensing under high temperature conditions

et al. 2022

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“…As a result, the SiC morphology changes from macroporous tubular through mesoporous hierarchical to a mesoporous filamentary one. Note that porous SiC has found applications in electronic devices and has promising applications in sensing [49].…”

Section: Dissolution Mechanisms and Types Of Pores: Crystallographica...mentioning

confidence: 99%

Porous semiconductor compounds

Monaico

Tiginyanu

Ursaki

2020

Semicond. Sci. Technol.

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In this review paper, we present a comparative analysis of the electrochemical dissolution of III-V (InP, GaAs, GaN), II-VI (ZnSe, CdSe) and SiC semiconductor compounds. The resulting morphologies are discussed, including those of porous layers and networks of low-dimensional structures such as nanowires, nanobelts, and nanomembranes. Self-organized phenomena in anodic etching are disclosed, leading to the formation of controlled porous patterns and quasi-ordered distribution of pores. Results of templated electrochemical deposition of metal nanowires, nanotubes and nanodots are summarized. Porosification of some compounds is shown to improve luminescence characteristics as well as to enhance photoconductivity, second harmonic generation and Terahertz emission. Possible applications of porous semiconductor compounds in various areas are discussed.

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Ethanol gas sensing performance of electrochemically anodized freestanding porous SiC

Cited by 12 publications

References 33 publications

Review—Semiconductor Materials and Devices for Gas Sensors

Review—Semiconductor Materials and Devices for Gas Sensors

Novel synthesis of ternary nanocomposites with β-SiC fibers, SnO₂, and In₂O₃ for atmospheric gas sensing under high temperature conditions

Porous semiconductor compounds

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Ethanol gas sensing performance of electrochemically anodized freestanding porous SiC

Cited by 12 publications

References 33 publications

Review—Semiconductor Materials and Devices for Gas Sensors

Review—Semiconductor Materials and Devices for Gas Sensors

Novel synthesis of ternary nanocomposites with β-SiC fibers, SnO2, and In2O3 for atmospheric gas sensing under high temperature conditions

Porous semiconductor compounds

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Product

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Novel synthesis of ternary nanocomposites with β-SiC fibers, SnO₂, and In₂O₃ for atmospheric gas sensing under high temperature conditions