Etude expérimentale de la dynamique de croissance de défauts étendus, sous irradiation électronique à haute énergie, dans le tellurure de cadmium

Atomic Scale Simulation of Dislocation Loops Formation in Thin Foil under High Energy Electron Irradiation

“…The repartition of vacancies changes gradually during the irradiation and their density becomes high close to free surfaces. This mechanism causes the formation of a layer of vacancies close to free surfaces what prevents the germination of extended defects in these areas in agreement with the experimental results on thin foil CdTe [1][2][3]. We have found also that the loops radius is strongly dependent on the location of the defect in the foil.…”

“…This is due to the fact that for high values of T 1 , the diffusion occurs with long distance and therefore furthers the annihilation of interstitial on the free surfaces. This effect explains why dislocation loops are likely to nucleate from a certain thickness of the thin foil what is in agreement with the experimental results on CdTe [1][2][3]. Unlike the loops created in the infinite material which are characterized by uniform radius (figure7a), we observe in figure 7b that the free surfaces generate a radius gradient of dislocation loops in the depth of the thin foil.…”

“…Many experimental and theoretical studies on high energy electron irradiation have been carried out in order to study the growth behaviour of dislocation loop, using respectively the high energy electron microscopy tools [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17] and the Chemical Reaction Rate Theory (CRRT) [1,4,7,10,[18][19][20]. In the preceding papers [21][22] the present authors have specifically dealt with the atomic scale simulation of the diffusion and agglomeration of point defects under high energy irradiation by using transputer systems of up to 25 processors working in parallel.…”