The photochemistry and photooxidation of three
acylsilanesformyltrimethylsilane (1a),
acetyltrimethylsilane (1b), and benzoyltrimethylsilane
(1c)has been studied in argon and
O2-doped argon matrices. UV irradiation in argon very
slowly results in the decarbonylation
of 1a and 1b, while 1c is stable under
these conditions. The major photoproduct of 1b
is
trimethyl(vinyloxy)silane. In O2-doped argon
matrices irradiation leads to the insertion of
an O2 molecule into the Si−CO bond. Other oxidation
products observed are the trimethylsilyl esters of the corresponding carboxylic acids and carbonates.
These results can be
rationalized if we assume that the primary photoprocesses of
1 are α-cleavage of the Si−CO
bond to give radical pairs and [1,2]-silyl shifts to give
siloxycarbenes.