Eu<sup>2+</sup> ions as an antioxidant additive for Sn-based perovskite light-emitting diodes

Wang, Xi; Liu, Lihua; Qian, Zhao; Gao, Congcong; Liang, Hongyan

doi:10.1039/d1tc03658k

Cited by 19 publications

(12 citation statements)

References 38 publications

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“…Synthesis of PeQDs: RGB PeQDs were synthesized and purified via a traditional method. [16] Briefly, 800 mg of Cs 2 CO 3 , 2.5 mL of oleic acid (OA), and 40 mL of 1-octadecene (1-ODE) were added to four flasks and heated to 110 °C for 30 min under vacuum. The temperature was further increased to 150 °C for 2 h in a nitrogen atmosphere, resulting in the formation of a transparent Cs precursor solution.…”

Section: Methodsmentioning

confidence: 99%

“…[4] On the other hand, inexpensive perovskite quantum dots (PeQDs) show the advantages of high quantum efficiency, narrow emission bands, tunable emission colors, and solution-based processes, [10][11][12][13][14] which have been used to prepare PeLEDs with superhigh color purity, high brightness, and high external quantum efficiency (EQE). [15][16][17][18][19][20][21][22][23][24] These promising prospects of PeLEDs will make them strong alternatives to traditional semiconductor micro-LEDs if their size is remarkably reduced, which benefits from easy fabrication, low cost, and high yield. However, current PeLEDs are almost prepared by spin coating, which makes it difficult to finely control the pixel size and results in a great loss in raw materials.…”

Section: Introductionmentioning

confidence: 99%

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Microscale Perovskite Quantum Dot Light‐Emitting Diodes (Micro‐PeLEDs) for Full‐Color Displays

Bai

Xuan

Zhao

et al. 2022

Advanced Optical Materials

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Group III–V semiconductor‐based microscale light‐emitting diode (micro‐LED) displays are recognized as one of the most promising display technologies with superhigh brightness and resolution, strong contrast, and superlarge color gamut but currently suffer from low efficiency, low production yield, and high cost. Here, it is proposed to realize cost‐effective and full‐color micro‐LED displays by using microscale perovskite quantum dot LEDs (micro‐PeLEDs) as emitters. Bright and uniform red‐, green‐, and blue‐emitting (RGB) micro‐PeLED arrays with each pixel size as small as 45 µm are fabricated by in situ inkjet printing a perovskite quantum dot (PeQD) emissive layer in the structure of indium tin oxide/poly(3,4‐ethylenedioxythiophene)‐poly(styrenesulfonate) (PEDOT:PSS)/poly(9‐vinylcarbazole) (PVK)/sodium dodecyl sulfate (SDS)/PeQD/1,3,5‐tris(1‐phenyl‐1H‐benzimidazol‐2‐yl)benzene (TPBi)/LiF/Al. These RGB micro‐PeLED arrays display an external quantum efficiency of 0.832%, 0.419%, and 0.052% for red, green, and blue colors, a resolution of 210 PPI, and a wide color gamut (135% of the National Television Standards Committee standard). The authors further demonstrate flexible and full‐color active‐matrix micro‐PeLED displays, which have potential applications in future ultrahigh‐definition displays, light communication, and artificial intelligence.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Microscale Perovskite Quantum Dot Light‐Emitting Diodes (Micro‐PeLEDs) for Full‐Color Displays

Bai

Xuan

Zhao

et al. 2022

Advanced Optical Materials

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“…Interestingly, not only to retard the oxidation of Sn 2+ , but also can these additives adjust the growth of the perovskite film, which is beneficial to obtain high quality film. [28,86,88,89] Specifically, Yuan et al used VA in the perovskite precursors, which strongly coordinated to Sn 2+ , to reduce the crystallization rate, thus improving the film morphology, and protect Sn 2+ from undesired oxidation during the film-forming process. The final PEA 2 SnI 4 based PeLEDs showed an EQE of 5% and an operating half-life exceeding 15 h at an initial brightness of 20 cd m −2 (Figure 4e), which is the highest efficiency among Sn-based PeLEDs reported to date.…”

Section: Sn-based Peledsmentioning

confidence: 99%

“…In general, the possible elements for B-site substitution include tin (Sn), germanium (Ge), antimony (Sb), strontium (Sr), calcium (Ca), manganese (Mn), copper (Cu), zinc (Zn), cerium (Ce), yttrium (Y), neodymium (Nd), ytterbium (Yb), europium (Eu), and so on. [18][19][20][21][22][23][24][25][26][27][28][29][30] So far, although some works have summarized the influence of B-site doping in perovskite, the benefit in respect of reducing toxicity was ignored. [31][32][33] Similarly, several review articles have been published on different kinds of lead-free perovskite materials and their applications.…”

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confidence: 99%

Environment‐Friendly Perovskite Light‐Emitting Diodes: Progress and Perspective

Wang

Lou

et al. 2022

Adv Materials Inter

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Metal halide perovskite materials have shown excellent optoelectronic properties suitable for light‐emitting diodes. With the development of technology in recent years, the performance of perovskite light‐emitting diodes (PeLEDs) has been improved rapidly, which can be almost comparable with that of the organic light‐emitting diodes (OLEDs) and quantum‐dot light‐emitting diodes counterparts. However, the toxicity of lead in perovskites may be unacceptable to consumers, which severely hinders the commercial applications of PeLEDs. Therefore, massive efforts on more environment‐friendly PeLEDs should be invested, prompting them potential candidates for next‐generation display devices. In this review, the synthesis methods and preparation processes of perovskite emitting layers that are successfully utilized in environment‐friendly PeLEDs are first summarized. Then, a comprehensive analysis of development on the applications of both less‐lead and lead‐free PeLEDs is reported. Finally, the possible strategies to further improve the performance of environment‐friendly PeLEDs are given.

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“…[ 10 ] Wang et al demonstrated that Eu 2+ ion doping of (PEA) 2 SnI 4 can promote the film quality and inhibit Sn 2+ oxidation to decrease the Sn 4+ defect density. [ 11 ] In spite of these progresses, efficient and convenient methods for tuning the performance of (PEA) 2 SnI 4 FETs are still in demand.…”

Section: Introductionmentioning

confidence: 99%

Tuning the Electrical Performance of 2D Perovskite Field‐Effect Transistors by Forming Organic Semiconductor/Perovskite van der Waals Heterojunctions

Guo

Liu

Chen

et al. 2022

Adv Elect Materials

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the performance of semiconductor devices. In conventional silicon-based devices, doping is widely employed as an effective way to tune the device performance. In general, doping can tune the electrical properties of semiconductors such as carrier density, Fermi level, and mobility to optimize device performance. [1] Typically, a higher hole density is obtained for p-doped Si, and a higher electron density is obtained for n-doped Si. [2] In recent years, new semiconductors have flourished, such as 2D semiconductors, [3] organic semiconductors (OSCs), [4] perovskite semiconductors, [5] etc. Among them, perovskite semiconductors have been heavily studied for their excellent optoelectronic property, especially in the field of solar cells and light-emitting devices. In addition, perovskite semiconductors are also quite promising in the application of FETs due to their high intrinsic mobilities over 100 cm 2 V −1 s −1 measured by terahertz techniques. [6] However, obtaining perovskite FETs that can function well at room temperature is challenging, which is attributed to the partially screened gate electric field by ion migration. [7] 2D Ruddlesden-Popper perovskites are considered an exceptional option to alleviate the ion migration problem due to their unique layered structures, where bulky organic chains can inhibit the ion migration along the direction perpendicular toThe development of techniques for tuning/controlling the properties of electronic devices such as field-effect transistors (FETs) is important for the optimization of device performance or the realization of custom-designed device functions. Here, a simple method for tuning the performance of 2D perovskite ((PEA) 2 SnI 4 ) FETs by transferring organic semiconductor PDVT-10 films onto (PEA) 2 SnI 4 films to form van der Waals heterojunctions (vdWHs) is presented. By varying the electrical properties of PDVT-10 with doping technique, the performance of (PEA) 2 SnI 4 FETs can be effectively tuned in terms of on-state current, threshold voltage, and mobility, with mobility increased from 0.10 cm 2 V −1 s −1 for pristine (PEA) 2 SnI 4 FETs to 0.46 cm 2 V −1 s −1 for the vdWH-based FETs. This phenomenon can be attributed to the holes transfer occurring at heterojunction interface. More interestingly, the performance of the (PEA) 2 SnI 4 FETs can be almost fully recovered once the PDVT-10 films are removed, indicating the reversibility of the method. Such method of tuning semiconductor device performance by forming vdWHs can be also extended to other semiconductors and devices.

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Eu²⁺ ions as an antioxidant additive for Sn-based perovskite light-emitting diodes

Abstract: We introduced Eu2+ ions as the electron donor to provide a reducing environment to suppress the oxidation of Sn2+. Finally, we obtained a pure red (PEA)2SnI4 LED with a high EQE up to 1.48% and a maximum brightness of 221 cd m−2.

Cited by 19 publications

References 38 publications

Microscale Perovskite Quantum Dot Light‐Emitting Diodes (Micro‐PeLEDs) for Full‐Color Displays

Microscale Perovskite Quantum Dot Light‐Emitting Diodes (Micro‐PeLEDs) for Full‐Color Displays

Environment‐Friendly Perovskite Light‐Emitting Diodes: Progress and Perspective

Tuning the Electrical Performance of 2D Perovskite Field‐Effect Transistors by Forming Organic Semiconductor/Perovskite van der Waals Heterojunctions

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Eu2+ ions as an antioxidant additive for Sn-based perovskite light-emitting diodes

Abstract: We introduced Eu2+ ions as the electron donor to provide a reducing environment to suppress the oxidation of Sn2+. Finally, we obtained a pure red (PEA)2SnI4 LED with a high EQE up to 1.48% and a maximum brightness of 221 cd m−2.

Cited by 19 publications

References 38 publications

Microscale Perovskite Quantum Dot Light‐Emitting Diodes (Micro‐PeLEDs) for Full‐Color Displays

Microscale Perovskite Quantum Dot Light‐Emitting Diodes (Micro‐PeLEDs) for Full‐Color Displays

Environment‐Friendly Perovskite Light‐Emitting Diodes: Progress and Perspective

Tuning the Electrical Performance of 2D Perovskite Field‐Effect Transistors by Forming Organic Semiconductor/Perovskite van der Waals Heterojunctions

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Product

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About

Eu²⁺ ions as an antioxidant additive for Sn-based perovskite light-emitting diodes