EUV actinic imaging tool aerial image evaluation of EUVL embedded phase shift mask performance

Yan, Pei-yang; Mochi, Iacopo; Goldberg, Kenneth A.

doi:10.1117/12.919710

SPIE Proceedings

2012

DOI: 10.1117/12.919710

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EUV actinic imaging tool aerial image evaluation of EUVL embedded phase shift mask performance

Pei-yang Yan

Iacopo Mochi

Kenneth A. Goldberg

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Cited by 2 publications

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SCAPSM: attenuated phase-shift mask structure for EUV lithography

Li,

Dong,

Wei

2024

Appl. Opt.

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The attenuated phase-shift mask (Att. PSM) is proven to be a promising resolution enhancement technology (RET) to improve the imaging performance in extreme ultraviolet (EUV) lithography. However, due to the reflective nature of the mask structure, the serious shadowing effect can affect the diffraction near field of the mask intensely and further impact the lithography imaging. With the purpose of improving the contrast of lithography imaging, a novel structure of the Att. PSM, to the best of our knowledge, is proposed in this paper. By introducing an absorbent sidewall along the edge of the mask absorber, the diffraction and shadowing effects can be mitigated. By applying the Kirchhoff approximation of mask diffraction, the ability of the novel structure to improve imaging performance is theoretically analyzed. Additionally, these analyses are confirmed by rigorous lithography simulations. The simulation results demonstrate that the proposed mask structure can improve the imaging contrast of EUV lithography, which has potential usage in advanced integrated circuit (IC) manufacturing.

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SCAPSM: attenuated phase-shift mask structure for EUV lithography

Li,

Dong,

Wei

2024

Appl. Opt.

View full text Add to dashboard Cite

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Coherent scattering microscopy as an effective inspection tool for analyzing performance of phase shift mask

et al. 2016

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The imaging performance of a half-tone phase shift mask (PSM) has been analyzed using coherent scattering microscopy (CSM), which allows analysis of the actinic characteristics of an extreme ultraviolet (EUV) mask such as its reflectivity, diffraction efficiency, and phase information. This paper presents the 1st experimental result showing the effect of 180° phase difference between the absorber and reflector in EUV mask. This reveals that a PSM offers a 46% improvement in 1st/0th diffraction efficiency and 14% improvement in image contrast when compared to a binary intensity mask (BIM). The horizontal-vertical critical dimension (H-V CD) bias is also reduced by 1.37 nm at 22 nm line and space (L/S) patterns. Since the performance of PSM can be evaluated without a wafer patterning process, CSM is expected to be a useful inspection tool for the development of novel EUV masks.

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EUV actinic imaging tool aerial image evaluation of EUVL embedded phase shift mask performance

Cited by 2 publications

References 10 publications

SCAPSM: attenuated phase-shift mask structure for EUV lithography

SCAPSM: attenuated phase-shift mask structure for EUV lithography

Coherent scattering microscopy as an effective inspection tool for analyzing performance of phase shift mask

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