EUV lithography at the 22nm technology node

Wood, O. R.; Koay, Chiew-Seng; Petrillo, Karen; Mizuno, Hiroyuki; Raghunathan, Sudhar; Arnold, John; Horak, D.; Burkhardt, Martin; McIntyre, Gregory; Deng, Yunfei; Fontaine, Bruno La; Okoroanyanwu, U.; Wallow, Tom; Landie, Guillaume; Standaert, T.; Burns, Sean; Waskiewicz, Christopher; Kawasaki, Hiromu; Chen, James H.-C.; Colburn, Matthew; Haran, Bala; Fan, S.; Yin, Yunpeng; Holfeld, Christian; Techel, Jens; Peters, Jan Hendrik; Bouten, Sander; Lee, Brian; Pierson, Bill; Kessels, Bart; Routh, Robert; Cummings, K. D.

doi:10.1117/12.847049

Cited by 17 publications

(7 citation statements)

References 8 publications

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“…In order to reduce the quantization error, we use the discretization penalty in Eq. (17) to bias the mask pixel close to n r or n a during the optimization procedure as follows:…”

Section: A Formulation Of Inverse Euv Lithographymentioning

confidence: 99%

“…One main challenge of the EUV OPC method is to compensate not only the OPE and photoresist effect, but also the pronounced flare and mask shadowing effects. In the past, a set of approaches were developed to resolve the imaging degradation attributed to flare [13][14][15], while some other methods were used to compensate the effect of shadowing or off-axis incidence [16][17][18][19]. Recently, comprehensive OPC methods incorporating OPE, flare, photoresist, and mask shadowing models in the optimization flow have been proposed so as to jointly consider these effects [5,[20][21][22][23][24][25].…”

Section: Introductionmentioning

confidence: 98%

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Gradient-based inverse extreme ultraviolet lithography

Ma¹,

Wang²,

Chen³

et al. 2015

Appl. Opt.

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Extreme ultraviolet (EUV) lithography is the most promising successor of current deep ultraviolet (DUV) lithography. The very short wavelength, reflective optics, and nontelecentric structure of EUV lithography systems bring in different imaging phenomena into the lithographic image synthesis problem. This paper develops a gradient-based inverse algorithm for EUV lithography systems to effectively improve the image fidelity by comprehensively compensating the optical proximity effect, flare, photoresist, and mask shadowing effects. A block-based method is applied to iteratively optimize the main features and subresolution assist features (SRAFs) of mask patterns, while simultaneously preserving the mask manufacturability. The mask shadowing effect may be compensated by a retargeting method based on a calibrated shadowing model. Illustrative simulations at 22 and 16 nm technology nodes are presented to validate the effectiveness of the proposed methods.

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“…In order to reduce the quantization error, we use the discretization penalty in Eq. (17) to bias the mask pixel close to n r or n a during the optimization procedure as follows:…”

Section: A Formulation Of Inverse Euv Lithographymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 98%

Gradient-based inverse extreme ultraviolet lithography

Ma¹,

Wang²,

Chen³

et al. 2015

Appl. Opt.

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“…EUV lithography presents specific challenges arising from the use of all-reflective Mo-Si multilayer coated optics and masks with their wavelength-specific optical properties which have to be precisely tuned to the working wavelength (13.5 nm). One of the major demands is the requirement of producing EUV-masks free of defects of sizes > 25 nm with homogeneous spectral reflectance properties on nearly perfect polished zero thermal expansion substrates [1][2][3][4][5]. With our research, we are developing components and solutions for the standalone actinic tools for mask blank and mask metrology.…”

Section: Introductionmentioning

confidence: 99%

Actinic EUV-mask metrology: tools, concepts, components

Lebert

Farahzadi

Diete

et al. 2011

27th European Mask and Lithography Conference

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There is a strong demand for standalone actinic tools for mask blank and mask metrology. We expect to deliver contributions to key issues for the infrastructure tools such as actinic reflectometer, actinic defect inspection and components like high brightness sources together with our partners.With our EUV-reflectometer EUV-MBR we are ready to fulfill HVM requirements in accurate and sensitive spectral metrology. Migrating from mask blanks to masks is supported with integrated fiducial mark detection and small spot sizes of down to < 0.03 mm². Hence, the EUV-MBR is able to detect minimal variations on mask blank and can support process monitoring for our partners in European EXEPT project.For actinic blank inspection a proof of concept experiment based on an EUV microscope at BASC's EUV-Lamp allows for comparing actinic signatures with AFM scans. Results allow for extrapolation to sub 30 nm sensitivity and fast full blank scan.For LPP sources we demonstrated a new concept utilizing a laser, with parameters optimized for high brightness EUV generation and a new regenerative target concept for high position stability, gain, repetition rate operation and efficiency in the first proof of concept experiment. Up to 350 W/(mm² sr) from < 20 µm source size have been demonstrated.

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“…The availability of defect-free mask blanks is the most critical technology gap hindering the commercialization of extreme ultraviolet lithography. Reducing defects on EUV masks is one of the most critical issues to be addressed for commercialization of EUV lithography [2,3]. The defect core, namely the pit or particle, can originate either on the substrate, during multilayer deposition, or on top of the multilayer stack [4,5].…”

Section: Introductionmentioning

confidence: 99%

Modeling the EUV multilayer deposition process on EUV blanks

Jindal¹,

Kearney²,

Harris-Jones³

et al. 2011

SPIE Proceedings

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Extreme ultraviolet lithography (EUVL) is the leading next generation lithography (NGL) technology to succeed optical lithography at the 22 nm node and beyond. EUVL requires a low defect density reflective mask blank, which is considered to be the most critical technology gap for commercialization of the technology. At the SEMATECH Mask Blank Development Center (MBDC), research on defect reduction of EUV mask blanks is being pursued using the Veeco Nexus deposition tool. Its defect performance is one of the factors limiting the availability of defect-free EUVL mask blanks. SEMATECH has identified better understanding of the physics of the deposition process as one of the keys to improving the defect performance of Nexus tools. SEMATECH is therefore undertaking an effort to model the physics of the tool backed with an experimental program to characterize the process. The goal is to be able to predict defect performance and defect improvement to direct new tool design. In this paper, we present the results of simulating the deposition rate and uniformity of deposited multilayers and growth of the multilayer on a given defect profile.

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EUV lithography at the 22nm technology node

Cited by 17 publications

References 8 publications

Gradient-based inverse extreme ultraviolet lithography

Gradient-based inverse extreme ultraviolet lithography

Actinic EUV-mask metrology: tools, concepts, components

Modeling the EUV multilayer deposition process on EUV blanks

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