EUV lithography performance for manufacturing: status and outlook

Pirati, Alberto; Peeters, Rudy; Smith, Daniel; Lok, Sjoerd; Noordenburg, Martijn van; Es, Roderik van; Verhoeven, Eric; Meijer, H.E.H.; Minnaert, Arthur; Horst, Jan-Willem van der; Meiling, H.; Mallmann, J.; Wagner, Christian; Stoeldraijer, Judon; Fisser, Geert; Finders, Jo; Zoldesi, Carmen; Stamm, Uwe; Boom, H.B.K.; Brandt, David C.; Brown, Daniel J.; Fomenkov, Igor V.; Purvis, Michael

doi:10.1117/12.2220423

Cited by 53 publications

(35 citation statements)

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“…Most remarkably, there have been substantial developments to exposure throughput, reliability, variance control and patterning materials for the high resolution required [8,9]. Currently, EUVL is projected to use in manufacturing at the 7-nm node or beyond [10].…”

Section: Status and Challengesmentioning

confidence: 99%

Promising Lithography Techniques for Next-Generation Logic Devices

2018

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Continuous rapid shrinking of feature size made the authorities to seek alternative patterning methods as the conventional photolithography comes with its intrinsic resolution limit. In this regard, some promising techniques have been proposed as next-generation lithography (NGL) that has the potentials to achieve both high-volume production and very high resolution. This article reviews the promising NGL techniques and introduces the challenges and a perspective on future directions of the NGL techniques. Extreme ultraviolet lithography (EUVL) is considered as the main candidate for sub-10-nm manufacturing, and it could potentially meet the current requirements of the industry. Remarkable progress in EUVL has been made and the tools will be available for commercial operation soon. Maskless lithography techniques are used for patterning in R&D, mask/mold fabrication and low-volume chip design. Directed self-assembly has already been realized in laboratory and further effort will be needed to make it as NGL solution. Nanoimprint lithography has emerged attractively due to its simple process steps, high throughput, high resolution and low cost and become one of the commercial platforms for nanofabrication. However, a number of challenging issues are waiting ahead, and further technological progresses are required to make the techniques significant and reliable to meet the current demand. Finally, a comparative study is presented among these techniques.

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Section: Status and Challengesmentioning

confidence: 99%

Promising Lithography Techniques for Next-Generation Logic Devices

2018

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“…There are still three issues to deal with this technique: power source, resists and mask infrastructure [14,15].…”

Section: Challenges In Euv Lithographymentioning

confidence: 99%

The Challenges of Advanced CMOS Process from 2D to 3D

Radamson

Zhang

et al. 2017

Applied Sciences

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Abstract:The architecture, size and density of metal oxide field effect transistors (MOSFETs) as unit bricks in integrated circuits (ICs) have constantly changed during the past five decades. The driving force for such scientific and technological development is to reduce the production price, power consumption and faster carrier transport in the transistor channel. Therefore, many challenges and difficulties have been merged in the processing of transistors which have to be dealed and solved. This article highlights the transition from 2D planar MOSFETs to 3D fin field effective transistors (FinFETs) and then presents how the process flow faces different technological challenges. The discussions contain nano-scaled patterning and process issues related to gate and (source/drain) S/D formation as well as integration of III-V materials for high carrier mobility in channel for future FinFETs.

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“…6 Recently, power of 100 W at the intermediate focus has been obtained through improvements to the entire EUVL system by the use of liquid tin droplets. 7,8 Yet, for EUVL high volume manufacturing (HVM) to be viable, the power at the intermediate focus must be greater than 240 W. Therefore any improvements that could increase the power and cost-efficiency of the system would be welcome. 9 a) Present address: Graduate school of Environmental and Life Science, Okayama University, 3-1-1 Tsushima-naka, Kita-ku, Okayama 700-8530, Japan.…”

Section: Introductionmentioning

confidence: 99%

High-space resolution imaging plate analysis of extreme ultraviolet (EUV) light from tin laser-produced plasmas

Musgrave

Takehiro

Ugomori

et al. 2017

Review of Scientific Instruments

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With the advent of high volume manufacturing capabilities by extreme ultraviolet lithography, constant improvements in light source design and cost-efficiency are required. Currently, light intensity and conversion efficiency (CE) measurments are obtained by charged couple devices, faraday cups etc, but also phoshpor imaging plates (IPs) (BaFBr:Eu). IPs are sensitive to light and high-energy species, which is ideal for studying extreme ultraviolet (EUV) light from laser produced plasmas (LPPs). In this work, we used IPs to observe a large angular distribution (10°-90°). We ablated a tin target by high-energy lasers (1064 nm Nd:YAG, 1010 and 1011 W/cm2) to generate the EUV light. The europium ions in the IP were trapped in a higher energy state from exposure to EUV light and high-energy species. The light intensity was angular dependent; therefore excitation of the IP depends on the angle, and so highly informative about the LPP. We obtained high-space resolution (345 μm, 0.2°) angular distribution and grazing spectrometer (5-20 nm grate) data simultaneously at different target to IP distances (103 mm and 200 mm). Two laser systems and IP types (BAS-TR and BAS-SR) were also compared. The cosine fitting values from the IP data were used to calculate the CE to be 1.6% (SD ± 0.2) at 13.5 nm 2% bandwidth. Finally, a practical assessment of IPs and a damage issue are disclosed.

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EUV lithography performance for manufacturing: status and outlook

Cited by 53 publications

References 0 publications

Promising Lithography Techniques for Next-Generation Logic Devices

Promising Lithography Techniques for Next-Generation Logic Devices

The Challenges of Advanced CMOS Process from 2D to 3D

High-space resolution imaging plate analysis of extreme ultraviolet (EUV) light from tin laser-produced plasmas

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