EUV Lithography: State-of-the-Art Review

Fu, Nan; Co, . HiSilicon Technologies; Liu, Yanxiang; Ma, Xiaolong; Chen, Zhanfeng

doi:10.33079/jomm.19020202

Cited by 52 publications

(35 citation statements)

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“…To produce NW arrays, top-down technologies use nanofabrication including lithography, etching, cleaning, passivation, functionalization, and metallization. The lithography technique is presented by photolithography [51][52][53], E-beam lithography [47,48,54,55], deep UV (DUV) nanoimprint lithography [53,56], and side-wall transfer lithography (STL) process [57,58]. In the following sections a survey of lithography, etching techniques, and also an investigation of contact resistance for the formation of NWs are presented.…”

Section: Fabrication Of Sinwsmentioning

confidence: 99%

“…In order to resolve lines (half-pitch) smaller than 7 nm, the technology had to push the exposure wavelength to the limit which is extreme ultraviolet light with a wavelength of 13.5 nm [52]. With the help of Extreme Ultraviolet (EUV) lithography system, semiconductor technology can be impelled further to beyond 3 nm and Moore's law can be extended to more decades in the future.…”

Section: Lithography Photolithographymentioning

confidence: 99%

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Silicon Nanowires for Gas Sensing: A Review

et al. 2020

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The unique electronic properties of semiconductor nanowires, in particular silicon nanowires (SiNWs), are attractive for the label-free, real-time, and sensitive detection of various gases. Therefore, over the past two decades, extensive efforts have been made to study the gas sensing function of NWs. This review article presents the recent developments related to the applications of SiNWs for gas sensing. The content begins with the two basic synthesis approaches (top-down and bottom-up) whereby the advantages and disadvantages of each approach have been discussed. Afterwards, the basic sensing mechanism of SiNWs for both resistor and field effect transistor designs have been briefly described whereby the sensitivity and selectivity to gases after different functionalization methods have been further presented. In the final words, the challenges and future opportunities of SiNWs for gas sensing have been discussed.

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Section: Fabrication Of Sinwsmentioning

confidence: 99%

Section: Lithography Photolithographymentioning

confidence: 99%

Silicon Nanowires for Gas Sensing: A Review

et al. 2020

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“…Nano-scale structures are traditionally defined using lithographic techniques such as UV lithography (1), electron beam lithography (2) and nano-imprint lithography (3). A cost-effective alternative to these traditional lithography methods could be to use nanoporous alumina as templates for ordered arrays of nanodots or nanowires (4,5).…”

Section: Introductionmentioning

confidence: 99%

In situ scanning x-ray diffraction reveals strain variations in electrochemically grown nanowires

Larsson

Abbondanza

Rämisch

et al. 2021

J. Phys. D: Appl. Phys.

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Templated electrochemical growth in nanoporous alumina can be used to fabricate nanowires with applications in magnetic storage devices, hydrogen sensors, and electrocatalysis. It is known that nanowires, grown in such templates, are strained. The strain in nanoscale materials can influence their performance in applications such as catalysts and electronic devices. However, it is not well established how the nanoporous template affects the lattice strain in the nanowires and how this develops during the growth process due to the lack of non-destructive in situ studies with spatial resolution. Here we have measured the strain and grain size of palladium nanowires in nanoporous templates during the growth process. For this we performed in situ scanning x-ray diffraction with a submicron focused x-ray beam. We found that there is a tensile strain in the nanowires and that it is more pronounced along the growth direction than in the confined direction of the templates. The tensile strain measured in situ is higher than previous ex situ reports, possibly due to hydrogen absorption during the growth. With the spatial information made possible with the focused synchrotron x-ray beam we could observe local variations in strain as a function of height. A region of local strain variation is found near the bottom of the nanowires where growth is initiated in branches at the pore bottoms. Knowledge of how nanoporous templates influence the strain of the nanowires may allow for atomic scale tailoring of the catalytic activity of such nanowires or minimizing strain to optimize electronic device performance.

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“…The lattice strain in-and out-of-plane (along and across the nanowires) was calculated from the position of the Pd(111) reflection since it is the most intense reflection. The lattice parameter of bulk Pd, a=3.89Å, was used as a reference to calculate the lattice strain, , as shown in equation (1). An illustration of the orientation of the lattice planes probed in the nanowires during out-of-plane and in-plane diffraction is shown in Figure 4 (a).…”

Section: Resultsmentioning

confidence: 99%

In Situ Scanning X-Ray Diffraction Reveals Strain Variations in Electrochemically Grown Nanowires

Larsson

Abbondanza²,

Rämisch³

et al. 2020

Preprint

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<a>Templated electrochemical growth in nanoporous alumina can be used to fabricate nanowires with applications in magnetic storage devices, hydrogen sensors, and electrocatalysis. It is known that nanowires, grown in such templates, are strained. The strain in nanoscale materials can influence their performance in applications such as catalysts and electronic devices. However, it is not well established how the nanoporous template affects the lattice strain in the nanowires and how this develops during the growth process due to the lack of non-destructive in situ studies with spatial resolution. Here we have measured the strain and grain size of palladium nanowires in nanoporous templates during the growth process. For this we performed in situ scanning x-ray diffraction with a submicron focused x-ray beam. We found that there is a tensile strain in the nanowires and that it is more pronounced along the growth direction than in the confined direction of the templates. The tensile strain measured in situ is higher than previous ex situ reports, possibly due to hydrogen absorption during the growth. With the spatial information made possible with the focused synchrotron x-ray beam we could observe local variations in strain as a function of height. A region of local strain variation is found near the bottom of the nanowires where growth is initiated in branches at the pore bottoms. Knowledge of how nanoporous templates influence the strain of the nanowires may allow for atomic scale tailoring of the catalytic activity of such nanowires or minimizing strain to optimize electronic device performance. </a>

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EUV Lithography: State-of-the-Art Review

Cited by 52 publications

References 0 publications

Silicon Nanowires for Gas Sensing: A Review

Silicon Nanowires for Gas Sensing: A Review

In situ scanning x-ray diffraction reveals strain variations in electrochemically grown nanowires

In Situ Scanning X-Ray Diffraction Reveals Strain Variations in Electrochemically Grown Nanowires

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