EUV Lithography: Today and Tomorrow

Luryi, Serge; Xu, Junzhong; Zaslavsky, Alexander

doi:10.1002/9781118678107.ch9

Cited by 3 publications

(3 citation statements)

References 38 publications

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“…The aim to further reduce the size of semiconductor devices to improve properties such as data storage [1,2] has let to stringent demands on the lithographic production process variations [3]. Consequently, the computational characterization of electromagnetic scattering from dielectric objects embedded in a layered medium, i.e.…”

Section: Introductionmentioning

confidence: 99%

Describing discontinuous finite 3D scattering objects in Gabor coefficients: fast and accurate methods

et al. 2021

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In relation to the computation of electromagnetic scattering in layered media by the Gabor-frame-based spatial spectral Maxwell solver, we present two methods to compute the Gabor coefficients of the transverse cross section of three-dimensional scattering objects with high accuracy and efficiency. The first method employs the analytically obtained two-dimensional Fourier transform of the cross section of a scattering object, which we describe by two-dimensional characteristic functions, in combination with the traditional discrete Gabor transform method for computing the Gabor coefficients. The second method concerns the expansion of the so-called dual window function to compute the Gabor coefficients by employing the divergence theorem. Both methods utilize (semi)-analytical approaches to overcome the heavy oversampling requirement of the traditional discrete Gabor transform method in the case of discontinuous functions. Numerical results show significant improvement in terms of accuracy and computation time for these two methods against the traditional discrete Gabor transform method.

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Section: Introductionmentioning

confidence: 99%

Describing discontinuous finite 3D scattering objects in Gabor coefficients: fast and accurate methods

et al. 2021

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“…To begin with, let us narrow down the parameter space, since a large portion of the parameters can be estimated from the published literature [12,5,13,14]. In EUVL, the EUV radiation will be produced by a tin plasma based source [15,16,17] (e.g.…”

Section: Industry-related Issue and Simulationsmentioning

confidence: 99%

“…e set for ion -neutral collisions is based on [62], with the inclusion of more recent measurements for H + 3 destruction (e.g. reactions 13,14,15,16 in Table 2.2) by [63] as indicated in remarks from [50]. Note, that there is some discussion in [62] about the dependence of the cross-section for H + 3 destruction on the internal rovibrational state of H + 3 .…”

Section: Cross-section Setmentioning

confidence: 99%

Numerical study of extreme-ultra-violet generated plasmas in hydrogen

Astakhov¹

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Plasma probe characteristics in low density hydrogen pulsed plasmas, Plasma Sources Sci. Technol. 24, 055018 (2015). Exploring the electron density in plasma induced by EUV radiation: II. Numerical studies in argon and hydrogen, submied Chapter 7 D.I. Astakhov, W.J. Goedheer, C.J. Lee, V.V. Ivanov, V.M. Krivtsun, O. Yakushev, K.N. Koshelev, D. V. Lopaev, and F. Bijkerk, Numerical and experimental studies of the carbon etching in EUV-induced plasma, submiedis work is part of the research programme 'Controlling photon and plasma induced processes at EUV optical surfaces (CP3E)' of the 'Stichting voor Fundamenteel Onderzoek der Materie (FOM)', which is financially supported by the 'Nederlandse Organisatie voor Wetenschappelijk Onderzoek (NWO)'. e CP3E programme is co-financed by Carl Zeiss SMT and ASML. We also acknowledge financial support from Agentschap NL (EXEPT project). Aknowledgments 109 Curriculum vitae 110Bibliography 112 Краткое содержаниеДанная работа посвящена численному моделированию динамики плазмы в водороде, индуцированной мягким рентгеновским излучением. Такую плазму возможно использовать для очистки (и поддержания чистоты) поверхности оптических элементов используемых в установках проекционной литографии в диапазоне мягкого рентгена, что обуславливает актуальность данной задачи. Для моделирования плазмы использовался метод частиц в ячейках в двумерной, цилиндрически симметричной постановке. Такой подход позволил получить количественные оценки для различных величин, измеряемых в эксперименте(например, ток, прошедший через электрод), и соотнести их с параметрами плазмы, полученными в результате моделирования. Для проверки точности модели были проведены тестовые расчеты, в которых проверяли, воспроизводит ли модель результаты экспериментов с дрейфовыми трубами (см. главу 2, раздел 2.8).Следующим шагом был проведен расчет зондовой характеристики, измеренной в установке, в которой водородная плазма образовывалась в результате развития электронной лавины (см. главу 5). Конфигурация эксперимента была осе-симметричной, что позволило самосогласованно учесть влияние цилиндрического зонда на формирование плазмы. Результаты расчетов и измерений тока на зонд совпали с достаточной точностью, однако параметры плазмы полученные в расчете существенно разошлись с таковыми из анализа зондовой характеристики с помощью стандартных зондовых теорий. Эти различия указывают на то, что стандартные методы анализа зондовых характеристик в случае импульсных плазм должны применяться с осторожностью, и разница между предсказаниями разных моделей отклика зонда может трактоваться как оценка погрешности определения характеристик плазмы.Успешное моделирование эксперимента с электронной лавиной позволило перейти к более сложному случаю, и рассмотреть формирование плазмы в газе из-за поглощения мягкого рентгеновского излучения. Введение излучения в модель привело к появлению большого количества плохо определенных параметров, таких как интенсивность излучения, временная, пространственная и спектральная форма импульса излучения и т....

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CMOS‐Technology‐Enabled Flexible and Stretchable Electronics for Internet of Everything Applications

2015

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Flexible and stretchable electronics can dramatically enhance the application of electronics for the emerging Internet of Everything applications where people, processes, data and devices will be integrated and connected, to augment quality of life. Using naturally flexible and stretchable polymeric substrates in combination with emerging organic and molecular materials, nanowires, nanoribbons, nanotubes, and 2D atomic crystal structured materials, significant progress has been made in the general area of such electronics. However, high volume manufacturing, reliability and performance per cost remain elusive goals for wide commercialization of these electronics. On the other hand, highly sophisticated but extremely reliable, batch-fabrication-capable and mature complementary metal oxide semiconductor (CMOS)-based technology has facilitated tremendous growth of today's digital world using thin-film-based electronics; in particular, bulk monocrystalline silicon (100) which is used in most of the electronics existing today. However, one fundamental challenge is that state-of-the-art CMOS electronics are physically rigid and brittle. Therefore, in this work, how CMOS-technology-enabled flexible and stretchable electronics can be developed is discussed, with particular focus on bulk monocrystalline silicon (100). A comprehensive information base to realistically devise an integration strategy by rational design of materials, devices and processes for Internet of Everything electronics is offered.

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EUV Lithography: Today and Tomorrow

Cited by 3 publications

References 38 publications

Describing discontinuous finite 3D scattering objects in Gabor coefficients: fast and accurate methods

Describing discontinuous finite 3D scattering objects in Gabor coefficients: fast and accurate methods

Numerical study of extreme-ultra-violet generated plasmas in hydrogen

CMOS‐Technology‐Enabled Flexible and Stretchable Electronics for Internet of Everything Applications

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