2011
DOI: 10.1117/12.880755
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EUV masks under exposure: practical considerations

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Cited by 7 publications
(7 citation statements)
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“…The total analyzed line length is approximately 1 m. The correlation of the line edge data from exposure to exposure is a measure of the mask contributions since any resist contributions would certainly be expected to be uncorrelated from exposure to exposure. These effects have further been verified in a full field Alpha Demo Tool using a conventional discharge source and a partial coherence of 0.5 [3].…”
Section: Mask Multilayer Roughnessmentioning
confidence: 99%
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“…The total analyzed line length is approximately 1 m. The correlation of the line edge data from exposure to exposure is a measure of the mask contributions since any resist contributions would certainly be expected to be uncorrelated from exposure to exposure. These effects have further been verified in a full field Alpha Demo Tool using a conventional discharge source and a partial coherence of 0.5 [3].…”
Section: Mask Multilayer Roughnessmentioning
confidence: 99%
“…This roughness directly maps to phase roughness in the reflected field which in turn maps to image plane speckle and LER [4][5][6][7]. The concern over, this problem has recently increased since its experimental demonstration in printed wafers at EUV [8] in both an microfield exposure tool [9] and a full field EUV alpha tool [3]. The coupling from roughness to LER depends on many factors including roughness magnitude, roughness correlation length, illumination partial coherence, aberrations, defocus, and numerical aperture (NA) [10].…”
Section: Mask Multilayer Roughnessmentioning
confidence: 99%
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“…The visibility of, and concern over, this problem has recently increased since its experimental demonstration at EUV [12] in both an microfield exposure tool [13] and a full field EUV alpha tool [7]. The coupling from roughness to LER, however, depends on many factors including roughness magnitude, roughness correlation length, illumination partial coherence, aberrations and defocus, and numerical aperture (NA).…”
Section: Introductionmentioning
confidence: 99%
“…The non-telecentric nature of EUV masks due to the requisite off-axis illumination, raises a variety of EUV specific problems. A thorough survey of the various sources of mask-induced CDU has been presented by Gallagher et al [7].…”
Section: Introductionmentioning
confidence: 99%