EUV multilayer defect compensation (MDC) by absorber pattern modification, film deposition, and multilayer peeling techniques

Pang, Liang; Satake, Masaki; Liu, Ying; Hu, Peter; Peng, Danping; Chen, Dongxue; Tolani, Vikram

doi:10.1117/12.2014265

Cited by 10 publications

(7 citation statements)

References 10 publications

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“…The model for the absorbing layer is applied twice, the first time to the incident radiation, and the second time to the radiation from the reflector stack expressed as a plane-wave expansion [1]. AIA (Aerial Image Analyzer) then will be employed to measure CD errors and capture possible defects on simulated aerial images.…”

Section: Afm Data Processing and Simulation Model For Buried Defect A...mentioning

confidence: 99%

“…Two-dimensional binary absorber contours representing full-height absorber defects, and three-dimensional height profiles are generated. The 2D contour together with the 3D height from the buried defect, assuming a conformal multi-layer profile [1], is used for wafer simulation with EUV scanner conditions.…”

Section: Afm Data Processing and Simulation Model For Buried Defect A...mentioning

confidence: 99%

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Wafer printability simulation of EUV mask defects using mask SEM and AFM

Son,

He,

Satake

et al. 2024

Metrology, Inspection, and Process Control XXXVIII

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The impact of mask defects on wafers has been successfully simulated by KLA's mask SEM-to-Aerial (S2A) image simulator. The high prediction accuracy, high throughput and low cost have been proven by mask shop production users [2][3]. S2A generates the reference mask SEM images by rendering the post-OPC design to match with measured mask SEM images containing defects. From the two mask SEM images, defect-free reference absorber contour and defective absorber contour are extracted, and the two contours are used for wafer-level aerial image simulation through EUV scanner conditions. Pass/Fail of %CDE, EPE, etc. are reported by automatically generating measurement cutlines.S2A can be used for wafer prediction for pre/post-repair full height absorber defects using top-down mask SEM images, but it cannot be used for EUV multi-layer buried defects or for partial height residues remaining after repair. KLA and SK hynix have been investigating a solution for this use case using AFM images, which can measure the height error from the buried defect or partial height residue in post-repair mask.

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Section: Afm Data Processing and Simulation Model For Buried Defect A...mentioning

confidence: 99%

Section: Afm Data Processing and Simulation Model For Buried Defect A...mentioning

confidence: 99%

Wafer printability simulation of EUV mask defects using mask SEM and AFM

Son,

He,

Satake

et al. 2024

Metrology, Inspection, and Process Control XXXVIII

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show abstract

“…Jonckheere et al indicated that the defects in mask blanks with lateral dimensions exceeding half pitch should be avoided, as they can reduce mask imaging quality 9 . It had been summarized that the large defects should be removed directly, influence caused by moderate size defects can be mitigated using patterning shift techniques 10,11 , while small size multilayer defects can only be compensated by mask repairing to meet the imaging quality requirements 12 . As critical dimension of pattern decreases, the impact of small-sized defects becomes increasingly significant.…”

Section: Introductionmentioning

confidence: 99%

Inverse analysis of multilayer defects in EUV mask from the perspective of imaging performance

Li,

Dong,

Wei

2024

Optical and EUV Nanolithography XXXVII

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The defect in multilayer of mask blank can degrade the image quality in EUV lithography. It is caused by particles deposited under or inside the multilayer, which leads to deformation of the multilayer structure. This deformation can impact the reflectivity of the multilayer and cause amplitude changes and phase shifts, resulting in pattern shift or critical dimension error in EUV lithography imaging. In order to improve imaging performance, medium size defects can be mitigated by pattern shifting techniques, while small size multilayer defects can only be compensated by mask repair to meet the imaging quality requirements. Therefore, it is necessary to investigate the effect of defect size on lithography imaging performance. In this work, we evaluate the impact of conformal defect with different sizes on the imaging of three classical test patterns: Line Space, Tip to Tip, and Tip to Line. By representing the defect by using ℎtop, 𝑤top, ℎbot, and 𝑤bot, the defects on different central and edge positions in the arc slit of exposure field are investigated. Then, the data gathered from lithography simulation is used to model the parameters of defect and the imaging result indicators such as CD. The corresponding relationship between the defect size and the imaging CD is derived through a mathematical model. From the constrains of the lithography imaging performance indicators, the tolerance of the parameter of the multilayer defect is further predicted inversely.

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“…It's special structure has higher reflectance to EUV light. Due to the excessive number of the multilayer, it is easy to embed defects with a size of a few nanometers in the deposition process of the multilayer mirror of the mask blank, resulting in the deformation of the multilayer and affecting the image quality of photolithography [3]. A key challenge of EUV lithography is the preparation of essentially defect-free mask blanks [4], which is a prerequisite for EUV lithography to improve yield and achieve mass production.…”

Section: Introductionmentioning

confidence: 99%

Analysis of extreme ultraviolet mask defect inspection based on complex amplitudes of the aerial images

Zhang,

Li,

Zheng

et al. 2023

Fourteenth International Conference on Information Optics and Photonics (CIOP 2023)

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EUV multilayer defect compensation (MDC) by absorber pattern modification, film deposition, and multilayer peeling techniques

Cited by 10 publications

References 10 publications

Wafer printability simulation of EUV mask defects using mask SEM and AFM

Wafer printability simulation of EUV mask defects using mask SEM and AFM

Inverse analysis of multilayer defects in EUV mask from the perspective of imaging performance

Analysis of extreme ultraviolet mask defect inspection based on complex amplitudes of the aerial images

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