2018
DOI: 10.1016/j.jphotochem.2018.06.005
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EUV photofragmentation and oxidation of a polyarylene – Sulfonium resist: XPS and NEXAFS study

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Cited by 17 publications
(18 citation statements)
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“…In particular, the soft X-ray energy range promotes electronic transitions from the carbon K-edge (1s orbital), which directly corresponds to the detection of changes in the carbon backbone of the organic ligands. [46][47][48] C K-edge NEXAFS spectroscopy was performed for the two materials, ZrMc and fluorine-doped ZrMcF. For each compound, a spectrum of the thin film before exposure to EUV light was recorded as reference (Fig.…”
Section: Resultsmentioning
confidence: 99%
“…In particular, the soft X-ray energy range promotes electronic transitions from the carbon K-edge (1s orbital), which directly corresponds to the detection of changes in the carbon backbone of the organic ligands. [46][47][48] C K-edge NEXAFS spectroscopy was performed for the two materials, ZrMc and fluorine-doped ZrMcF. For each compound, a spectrum of the thin film before exposure to EUV light was recorded as reference (Fig.…”
Section: Resultsmentioning
confidence: 99%
“…In fact, the discharge current is basically unchanged under different delay conditions when the voltage is maintained. Compared with LTD and LPP spectra, the intensity of the LTD spectra at 7.2 and 6.76 nm was higher than shown in [7], which indicates that there are fewer satellites in LTD. As seen in Figure 8, the presence of resonance lines near 7.14 nm from Ag-like Gd 17+ , is clearly demonstrated by small intensity peaks in all spectra. It can be seen clearly that the spectral intensity between 6.5 and 7.6 nm increases with the laser-current delay.…”
Section: Theoretical Calculationsmentioning
confidence: 68%
“…A reflective coefficient of 74.5% at 6.66 nm with LaN/B multilayer has been achieved [5], and changing the thickness of each bilayer can slightly tune the wavelength corresponding to maximum reflectance [6]. Moreover, the resist sensitivity has been evaluated for the beyond extreme ultraviolet BEUV source around 6.x nm [7,8].…”
Section: Introductionmentioning
confidence: 99%
“…40,41 Absorption of EUV photons is a not resonant process, and a high stability of the aromatic section of the resists was found in spite of the studied resists containing heavy metal atoms to enhance the absorption of EUV photons. In particular, in the EUV irradiation of a polyarylene-sulfonium resist (PAS), 41 the aromatic sections of the polymer remained almost intact even after 15 min of continuous irradiation at 103.5 eV. In those experiments, the sizing dose used was more than 60 times higher than is usually used in EUV lithography.…”
Section: Introductionmentioning
confidence: 99%
“…The results presented here are very interesting taking into account our very recent work carried out using EUV excitation at 103.5 eV. 40,41 Absorption of EUV photons is a not resonant process, and a high stability of the aromatic section of the resists was found in spite of the studied resists containing heavy metal atoms to enhance the absorption of EUV photons. In particular, in the EUV irradiation of a polyarylene-sulfonium resist (PAS), 41 the aromatic sections of the polymer remained almost intact even after 15 min of continuous irradiation at 103.5 eV.…”
Section: Introductionmentioning
confidence: 99%