EUVL Challenges towards 1x nm Generation

Kyoh, Suigen; Nakajima, Yumi; Watanabe, Shinya; Imamura, Takahiro; Sasaki, Toshiyuki; Omura, Mitsuhiro; Tawarayama, Kazuo; Matsunaga, Kentaro

doi:10.2494/photopolymer.24.19

Cited by 7 publications

(6 citation statements)

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“…Thus, to further enhance the resolution, double patterning or self-aligned double patterning techniques using ArF-imm lithography are being applied for 3x nm and 2x nm processes [1][2][3]. Although those processes overcome the resolution limit of ArF-imm lithography, there are concerns relating to the increase in process steps and cost of ownership, and the difficulty of overlay [4]. The mainstream for enhancing resolution and reducing cost is a decrease in wavelength, with extreme ultraviolet (EUV) lithography, which uses a 13.5 nm light source, being regarded as a candidate for next generation lithography.…”

Section: Introductionmentioning

confidence: 99%

Perpendicularly Oriented Cylinders of Si-containing Block Copolymers by Atmospheric Thermal Annealing

Seshimo¹,

Odashima

Maeda

et al. 2016

J. Photopol. Sci. Technol.

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The directed self-assembly (DSA) of block copolymers (BCPs) can realize as one of candidates for next generation lithography. The BCPs for DSA should exhibit a high resolution, an ability to form perpendicularly oriented domains in the thin film by thermal annealing under mild condition, and a high etching selectivity. Here, we report a new Si-containing BCPs targeted to form perpendicularly oriented cylinders in thin films. The hydroxyl groups in the side chains introduced in the Si-containing block provide a good surface free energy (SFE) balance leading to the perpendicular orientation. Furthermore, this orientation can be completed in only one minute atmospheric thermal annealing at 150 °C. Oxygen plasma etching for the thin films results in the achievement of hexagonally packed cylinders.

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Section: Introductionmentioning

confidence: 99%

Perpendicularly Oriented Cylinders of Si-containing Block Copolymers by Atmospheric Thermal Annealing

Seshimo¹,

Odashima

Maeda

et al. 2016

J. Photopol. Sci. Technol.

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“…Self Aligned Double Patterning [3] for 3x nm and 2x nm. Further size reduction requires triple or quadruple patterning, and it causes huge increase of CoO and the difficulty of overlay [4].…”

Section: Introductionmentioning

confidence: 99%

Self-Consistent Field Theory of Directed Self-Assembly on CH Pitch Division

Tominaga¹,

Minegishi²,

Komatsu³

et al. 2014

J. Photopol. Sci. Technol.

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“…Self Aligned Double Patterning [4] for 3x nm and 2x nm. Further size reduction requires triple or quadruple patterning, and it causes huge increase of CoO and the difficulty of overlay [5] Extreme ultraviolet (EUV) lithography has been the favorite candidate of successor of immersion ArF [6][7][8]. Except EUV lithography, other lithography candidates, i.e., multi patterning, nanoimprint, mask less lithography, and DSA are also investigated.…”

Section: Introductionmentioning

confidence: 99%

Directed Self Assembly Materials for Semiconductor Lithography

Minegishi¹,

Naruoka²,

Nagai³

2013

J. Photopol. Sci. Technol.

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The Directed Self Assembly (DSA) method is becoming a key complementary technology for enabling lithographic pattern feature shrinkage. Recent DSA technology has developed remarkable improvements in many aspects of materials and process. Block co-polymer, especially polystyrene-block-polymethylmethacrylate (PS-b-PMMA) is the standard DSA patterning material for lithography. However, the patterning limit of PS-b-PMMA is about 25nmP, and high-χ block co-polymer is necessary for sub 20nmP patterning. Not only block co-polymer, but also underlayer (neutral layer, pinning layer), top coat, and directing pattern forming photoresist are also necessary. In this paper, recent progress of directed self assembly materials and supporting materials are described.

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EUVL Challenges towards 1x nm Generation

Cited by 7 publications

References 0 publications

Perpendicularly Oriented Cylinders of Si-containing Block Copolymers by Atmospheric Thermal Annealing

Perpendicularly Oriented Cylinders of Si-containing Block Copolymers by Atmospheric Thermal Annealing

Self-Consistent Field Theory of Directed Self-Assembly on CH Pitch Division

Directed Self Assembly Materials for Semiconductor Lithography

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