Evaluate Fixed Charge and Oxide‐Trapped Charge on SiO₂/GaN Metal‐Oxide‐Semiconductor Structure Before and After Postannealing

Abstract

Figure 8. Current density-electric field ( J-E) characteristics of SiO 2 /GaN MOS capacitors after PMA. The black line, red line, and blue line indicate the data of 15, 40, and 82 nm samples, respectively.Figure 9. Relationship between breakdown field and cumulative breakdown distribution. Black dots, red dots, and blue dots indicate the data of 15, 40, and 82 nm samples, respectively.www.advancedsciencenews.com www.pss-b.com

Interface Trap Effect on the n-Channel GaN Schottky Barrier-Metal–Oxide Semiconductor Field-Effect Transistor for Ultraviolet Optoelectronic Integration

“…However, the sensing performance of these fabricated APS and PPS devices exhibited a high dark current, low responsivity, and poor UVRR, which was attributed to their low-quality epitaxial layer and high defect density. A high dark current caused by trap-assisted leakage through defects deteriorates the photo-response characteristics of UV photodetectors, resulting in poor detection capability [ 19 , 20 , 21 , 22 ]. Moreover, during imaging processes, the high noise (fixed pattern and temporal) caused by the defects decreases the signal-to-noise ratio (SNR), adversely affecting the quality of the sensing image [ 11 , 22 , 23 , 24 , 25 , 26 , 27 ].…”

Atomic structure analysis of gallium oxide at the Al2O3/GaN interface using photoelectron holography

“…3) Therefore, plasma-enhanced chemical vapor deposition and atomic layer deposition (ALD) films (e.g. SiO 2 , [4][5][6][7][8] Al 2 O 3 , 9,10) AlSiO, 11,12) and AlON, 13) ) are used to form the gate dielectric film. However, an ultrathin gallium oxide layer is always formed at the interface between the deposited dielectric film and GaN.…”