2008
DOI: 10.1016/j.sse.2008.03.018
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Evaluating MOSFET harmonic distortion by successive integration of the I–V characteristics

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Cited by 14 publications
(15 citation statements)
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“…The very mathematical nature of these methods directly contributes in diminishing the effect of measurement error and noise. The effectiveness of integration-based methods, such as those presented here, has been proven already in the extraction of other electron devices' model parameters [9][10][11]. In what follows we will show how such simple methods may be advantageously applied for calculating the sub-threshold slope factor of MOSFETs.…”
Section: Introductionmentioning
confidence: 88%
“…The very mathematical nature of these methods directly contributes in diminishing the effect of measurement error and noise. The effectiveness of integration-based methods, such as those presented here, has been proven already in the extraction of other electron devices' model parameters [9][10][11]. In what follows we will show how such simple methods may be advantageously applied for calculating the sub-threshold slope factor of MOSFETs.…”
Section: Introductionmentioning
confidence: 88%
“…It is important to point out that function D may be understood as a representation or measure of the device's amount of nonlinearity, which for a linear element is obviously equal to zero. This description of function D, in terms of linearity, led us to refer to this function as the "Integral Non Linearity Function" (INLF) [40], [41], and to use it to quantify the non-linear behavior of devices and circuits in terms of distortion.…”
Section: The Integral Difference Function Concept and The G Methodsmentioning
confidence: 99%
“…The optimum value of ω is a complicated function of E g , E q , and φ b . However, a polynomial expression for ω can be found either by Taylor expansion or the successive integration method [38] leading to:…”
Section: Appendix B Effective Mass For Schottky Barriersmentioning
confidence: 99%