Evaluating the performance of efficient Cu2NiSnS4 solar cell—A two stage theoretical attempt and comparison to experiments

Khatun, Most. Marzia; Hosen, Adnan; Ahmed, Sheikh Rashel Al

doi:10.1016/j.heliyon.2023.e20603

Cited by 13 publications

(5 citation statements)

References 89 publications

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“…In this numerical approach, the specific capture cross-section value of 10 –19 cm 2 at interfaces is chosen to optimize the high performance of the proposed SnS solar cells. This selected interface trap capture cross-section of 10 –19 cm 2 has excellent consistency with the reported capture cross-section values in previous works. ,− The theoretical calculation is accomplished with a photon intensity of 100 mW/cm 2 (illumination of AM1.5G) at 300 K.…”

Section: Numerical Modeling and Device Structuresupporting

confidence: 82%

“…All the outputs of the SnS PV devices introducing HTLs are improved remarkably. By adding an HTL at the rear surface, a sufficient potential barrier at the HTL/absorber interface is generated for preventing photogenerated electrons from the absorber. ,,− Thus, the performance enhancements are due to the diminution in minority carrier (electron) recombination loss at the back surface of the heterojunction TFSC. − ,,, The PCE of the SnS cell with Zn 3 P 2 HTL is found to be 30.45%, which is superior as compared to the efficiencies of 25.59% for CuI, 27.87% for CuS, and 25.43% for Cu 2 O HTLs, respectively.…”

Section: Resultsmentioning

confidence: 99%

“…17,39,40,47,51 Numerous materials with electron and hole thermal velocities of 10 7 cm s −1 have been used. 45−47 Also, the following equation can be used to determine the absorption coefficient (α) 74 A h E ( )…”

Section: Numerical Modeling and Device Structurementioning

confidence: 99%

“…The PV performances of the SnS-based TFSCs with TiO 2 and CdS ETLs are also judged. Table presents the simulation parameters employed for various layers in the heterojunction SnS-based PV devices. ,,,, Numerous materials with electron and hole thermal velocities of 10 7 cm s –1 have been used. − Also, the following equation can be used to determine the absorption coefficient (α) α = A α false( h ν − E g false) where the prefactor A α is set to be 10 5 cm –1 eV –1/2 for the deferent elements utilized in the designed heterojunction. The surface recombination velocities of electrons and holes for both front and rear electrodes, respectively, are fixed to be 10 7 cm/s , Single-donor-type and single-acceptor-type defect states with Gaussian-like energy distributions, respectively, are selected for p-type films.…”

Section: Numerical Modeling and Device Structurementioning

confidence: 99%

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Investigation on the Performance Enhancement of Heterojunction SnS Thin-Film Solar Cell with a Zn₃P₂ Hole Transport Layer and a TiO₂ Electron Transport Layer

Ahmed

2023

Energy Fuels

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The tin sulfide (SnS) absorber is becoming more attractive for application in high-efficiency, low-cost, and stable thin-film photovoltaic (PV) technology. In this work, zinc phosphide (Zn3P2) as a hole transport layer (HTL) and titanium dioxide (TiO2) as an electron transport layer (ETL) are employed to enhance the outputs of the SnS-based thin-film PV cell for the first time. The PV outputs of the proposed novel heterojunction structure defined as Ni/Zn3P2/SnS/TiO2/ITO/Al are assessed by using a 1D solar cell capacitance simulator. This study also reports on comparative PV outputs between the thin-film SnS-based solar cell with various HTLs and ETLs. It is observed that the proposed nontoxic Zn3P2 as the HTL and TiO2 as the ETL create proper band configurations with the SnS absorber layer. The carrier recombination loss can be significantly minimized at both rear and front interfaces in the proposed new heterojunction Zn3P2/SnS/TiO2/ITO solar device, thus considerably improving the PV output parameters. Several physical parameters, including thickness, carrier concentration, defect density, working temperature, work function, back surface recombination velocity, and device resistances, have been varied to evaluate the outputs of the suggested SnS PV cell. A power conversion efficiency of 30.45% is determined at the optimum thicknesses of 0.1 μm for the Zn3P2 HTL, 1.0 μm for the SnS absorber, and 0.05 μm for the TiO2 ETL. Therefore, these findings imply that the nontoxic Zn3P2 as the HTL and TiO2 as the ETL can be exploited to improve the efficiency of the heterojunction SnS solar cell structure.

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Section: Numerical Modeling and Device Structuresupporting

confidence: 82%

Section: Resultsmentioning

confidence: 99%

Section: Numerical Modeling and Device Structurementioning

confidence: 99%

Section: Numerical Modeling and Device Structurementioning

confidence: 99%

See 2 more Smart Citations

Investigation on the Performance Enhancement of Heterojunction SnS Thin-Film Solar Cell with a Zn₃P₂ Hole Transport Layer and a TiO₂ Electron Transport Layer

Ahmed

2023

Energy Fuels

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“…From the data shown in Figure 5, it is clear that these materials actively absorb light even at low photon energies, namely Cu 2 NiSnS 4 is sensitive even to rays with an energy of 0.7 eV. Cu 2 NiSiS 4 also begins to be activated in the energy range above 1.3 eV, having the highest photoconductivity when absorbing short-wavelength radiation [64][65][66][67][68][69][70].…”

Section: As Shown Inmentioning

confidence: 99%

Analysis of the Optical Properties and Electronic Structure of Semiconductors of the Cu2NiXS4 (X = Si, Ge, Sn) Family as New Promising Materials for Optoelectronic Devices

Nematov

2024

JOPR

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In this work, the optoelectronic characteristics of kesterites of the Cu2NiXS4 system (X = Si, Ge, Sn) were studied. The electronic properties of the Cu2NiXS4 (X = Si, Ge, Sn) system were studied using first-principles calculations within the framework of density functional theory. For calculations, ab initio codes VASP and Wien2k were used. The high-precision modified Beke-Jones (mBJ) functional and the hybrid HSE06 functional were used to estimate the bandgap, electronic and optical properties. Calculations have shown that when replacing Si with Ge and Sn, the band gap decreases from 2.58 eV to 1.33 eV. Replacing Si with Ge and Sn reduces the overall density of electronic states. In addition, new deep (shallow) states are formed in the band gap of these crystals, which is confirmed by the behavior of their optical properties. The obtained band gap values are compared with existing experimental measurements, demonstrating good agreement between HSE06 calculations and experimental data. The nature of changes in the dielectric constant, absorption capacity and optical conductivity of these systems depending on the photon energy has also been studied. The statistical dielectric constant and refractive index of these materials were found. The results will help increase the amount of information about the properties of the materials under study and will allow the use of these compounds in a wider range of optoelectronic devices, in particular, in solar cells and other devices that use solar radiation to generate electric current.

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Investigating the Performance of FASnI₃‐Based Perovskite Solar Cells with Various Electron and Hole Transport Layers: Machine Learning Approach and SCAPS‐1D Analysis

Khan,

Ahmed

2024

Advcd Theory and Sims

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In this study, tungsten disulfide (WS2) as an electron transport layer (ETL) and zinc phosphide (Zn3P2) as a hole transport layer (HTL) are incorporated to improve the performance of the FASnI3‐based perovskite solar cell (PSC). The solar cell capacitance simulator in one dimension (SCAPS‐1D) is used to investigate the photovoltaic (PV) performances of the heterojunction Al/FTO/WS2/FASnI3/Zn3P2/Ni solar structure. The performance metrics of proposed device with numerous ETLs and HTLs are discussed. The suggested device provides appropriate band structures, which in turn potentially reduce minority electron recombination, thereby enhancing overall performances. Influences of various physical parameters such as thickness, doping concentration, bulk defect, interface defect states, work function, and back surface recombination velocity (BSRV) on the device performances have also been analyzed. An efficiency of 29.81% is achieved at the optimum thicknesses of 0.05 µm for WS2 ETL, 1.0 µm for FASnI3 absorber, and 0.1 µm for Zn3P2 HTL. Furthermore, a machine learning algorithm is used to assess the impact of multiple semiconductor parameters, and found that defect density influences the most. This model, which has an approximate correlation coefficient (R2) of 0.937, can predict the data with precision. Therefore, these numerical outcomes will help researchers further design and manufacture a low‐cost and highly efficient FASnI3‐based PSC.

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Evaluating the performance of efficient Cu2NiSnS4 solar cell—A two stage theoretical attempt and comparison to experiments

Cited by 13 publications

References 89 publications

Investigation on the Performance Enhancement of Heterojunction SnS Thin-Film Solar Cell with a Zn₃P₂ Hole Transport Layer and a TiO₂ Electron Transport Layer

Investigation on the Performance Enhancement of Heterojunction SnS Thin-Film Solar Cell with a Zn₃P₂ Hole Transport Layer and a TiO₂ Electron Transport Layer

Analysis of the Optical Properties and Electronic Structure of Semiconductors of the Cu2NiXS4 (X = Si, Ge, Sn) Family as New Promising Materials for Optoelectronic Devices

Investigating the Performance of FASnI₃‐Based Perovskite Solar Cells with Various Electron and Hole Transport Layers: Machine Learning Approach and SCAPS‐1D Analysis

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Evaluating the performance of efficient Cu2NiSnS4 solar cell—A two stage theoretical attempt and comparison to experiments

Cited by 13 publications

References 89 publications

Investigation on the Performance Enhancement of Heterojunction SnS Thin-Film Solar Cell with a Zn3P2 Hole Transport Layer and a TiO2 Electron Transport Layer

Investigation on the Performance Enhancement of Heterojunction SnS Thin-Film Solar Cell with a Zn3P2 Hole Transport Layer and a TiO2 Electron Transport Layer

Analysis of the Optical Properties and Electronic Structure of Semiconductors of the Cu2NiXS4 (X = Si, Ge, Sn) Family as New Promising Materials for Optoelectronic Devices

Investigating the Performance of FASnI3‐Based Perovskite Solar Cells with Various Electron and Hole Transport Layers: Machine Learning Approach and SCAPS‐1D Analysis

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Product

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Investigation on the Performance Enhancement of Heterojunction SnS Thin-Film Solar Cell with a Zn₃P₂ Hole Transport Layer and a TiO₂ Electron Transport Layer

Investigation on the Performance Enhancement of Heterojunction SnS Thin-Film Solar Cell with a Zn₃P₂ Hole Transport Layer and a TiO₂ Electron Transport Layer

Investigating the Performance of FASnI₃‐Based Perovskite Solar Cells with Various Electron and Hole Transport Layers: Machine Learning Approach and SCAPS‐1D Analysis