Evaluation and comparison of silicon and gallium nitride power transistors in LLC resonant converter

Zhang, Weimin; Long, Yu; Zhang, Zheyu; Wang, Fred; Tolbert, Leon M.; Blalock, Benjamin J.; Henning, Stephan; Wilson, Chris; Dean, Robert N.

doi:10.1109/ecce.2012.6342657

Cited by 66 publications

(28 citation statements)

References 11 publications

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“…Gallium nitride (GaN) devices are advantageous, because they exhibit low switching loss in high-frequency operations (24) (25) . In this experiment, a prototype 500 W TAB converter using GaN power devices was constructed, consisting of three active H-bridge cells that were mutually connected through a three-winding high-frequency transformer, as shown in Fig.…”

Section: Methodsmentioning

confidence: 99%

A DC Power Distribution System in a Data Center using a Triple Active Bridge DC-DC Converter

Masumoto

Wãda

et al. 2018

IEEJ Journal IA

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In recent years, the demand for high-reliability systems has been on the rise, while DC power distribution systems are widely used in data centers. The authors propose a DC power distribution system that uses a triple active bridge (TAB) DC-DC converter, toward the realization of such higher-reliability systems. The TAB converter is based on an isolated DC-DC converter and can control the DC power flow among the three ports. First, this paper presents a basic power flow control procedure of the TAB converter, using a phase-shift control. Further, two types of higher-reliability DC power distribution systems are proposed using the TAB converter. The experimental design and simulations of a prototype 200-V TAB converter with 500-W power, connected with the single and double loads, are reported. In the experiment, the 200-V TAB converter rated at a power of 500 W was constructed from a three-winding transformer and gallium nitride (GaN) power devices. Smooth output waveforms indicate good controllability of the power flow and good functional performance of the proposed DC power distribution system.

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Section: Methodsmentioning

confidence: 99%

A DC Power Distribution System in a Data Center using a Triple Active Bridge DC-DC Converter

Masumoto

Wãda

et al. 2018

IEEJ Journal IA

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“…The development of wide bandgap power semiconductor devices like SiC and GaN allows to further push the junction temperature above 200 ˚C. However, they are developmental and expensive [3][4][5][6]. Therefore, it is meaningful to investigate the prospects for extending Si device junction temperatures to 200 ˚C as a lower-cost solution.…”

Section: Introductionmentioning

confidence: 98%

A high temperature traction inverter with reduced cooling and improved efficiency for HEV applications

Jiang³

et al. 2013

2013 IEEE Energy Conversion Congress and Exposition

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This paper presents a 30 kW Si IGBT based threephase traction inverter for operating at the junction temperature of 200 ˚C with the reduced cooling and improved efficiency in hybrid electric vehicle (HEV) applications. The high temperature capable Si devices based module is developed for operation with the 105 ˚C high temperature engine coolant, leading to lower cost and higher power density. A variable switching frequency pulse width modulation (VSFPWM) scheme is employed to relieve the negative effect of high temperature on loss. The experimental results demonstrate that the three-phase converter can operate continuously with the 105 ˚C high temperature coolant. The efficiency is increased from 94.98 % to 95.73 % after VSFPWM is applied at full load.

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“…In line with the trend of increasing the switching frequencies in power electronics, GaN-based transistors exhibit attractive features due to their frequency capability and low on-resistance. This has prompted researchers to develop and test converter prototypes using GaN devices in order to explore their capability in DC/DC converters [2], and determine if they actually offer a competitive edge over silicon ones in the field of energy conversion (as investigated in [3], [4]). The overall feasibility of high-efficiency DC/DC converters based on GaN transistors has already been proved [5], but their performance in more complex architectures, such as multilevel inverters, and at higher power, has not been investigated yet.…”

Section: Introductionmentioning

confidence: 99%

Modular photovoltaic inverter with high-frequency DC/DC stage based on low-voltage FETs

Giuliani

Barater

Concari

et al. 2014

2014 IEEE Energy Conversion Congress and Exposition (ECCE)

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This paper proposes a multi-string DC/AC architecture for photovoltaic grid-connected converters intended using GaN FETs as switching devices. Three isolated DC/DC converters fed by separate strings supply the DC Link of a 7-level cascaded H-Bridge DC/AC multilevel inverter. Due to the great interest in power plants oriented to selfconsumption, a DC/DC converter configuration with a battery system for energy storage is also considered. Extensive simulations of the control confirmed the capability of the architecture to handle the power flows required by the proposed application.

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Evaluation and comparison of silicon and gallium nitride power transistors in LLC resonant converter

Cited by 66 publications

References 11 publications

A DC Power Distribution System in a Data Center using a Triple Active Bridge DC-DC Converter

A DC Power Distribution System in a Data Center using a Triple Active Bridge DC-DC Converter

A high temperature traction inverter with reduced cooling and improved efficiency for HEV applications

Modular photovoltaic inverter with high-frequency DC/DC stage based on low-voltage FETs

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