Evaluation and correction of time dependent amplifier non-linearity

Katz, A.; Dorval, Roger

doi:10.1109/mwsym.1996.511068

Cited by 18 publications

(4 citation statements)

References 4 publications

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“…Because of the large currents drawn by a GaAs device, the decoupling circuits must exhibit a near zero impedance at the signal's envelope frequencies, while maintaining a high impedance at the signal's RF frequency. Because of the relative lower currents and resulting higher impedances of GaN PAs, the bias circuits while still of concern are not as critical [3,4]. It was found that the impedance of the matching networks and bias circuits at the second harmonic frequency was an important contributor to amplifier efficiency.…”

Section: Rf In Couplermentioning

confidence: 99%

A linear GaN UHF SSPA with record high efficiency

Katz

Eggleston

McGee

2009

2009 IEEE MTT-S International Microwave Symposium Digest

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This paper discusses a highly efficient linear UHF solid state power amplifier (SSPA) developed for avionics and space applications. Predistortion linearization combined with high-voltage gallium nitride (GaN) FET technology allows the simultaneous achievement of both linearity and record high linear efficiency (70%). This amplifier will produce over 100 W of linear output power as well as a power added efficiency (PAE) at saturation approaching 90 percent. This paper describes the power amplifier design approach and presents measured test data.

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Section: Rf In Couplermentioning

confidence: 99%

A linear GaN UHF SSPA with record high efficiency

Katz

Eggleston

McGee

2009

2009 IEEE MTT-S International Microwave Symposium Digest

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“…Because of the large fluctuating currents drawn by these devices, the decoupling circuits must exhibit a near zero impedance at the signal's envelope frequencies, while maintaining a high impedance (> 250 ohms) at the signal's RF frequency. Even small (millivolt) changes in the drain or gate voltage will produce amplitude and phase modulation products that can degrade the PA's effective linearity [6,7]. To achieve this goal, minimal series inductance and low inductance shunt capacitors must be used.…”

Section: Sspa Requirementsmentioning

confidence: 99%

A Highly Efficient UHF Power Amplifier Using GaAs FETs for Space Applications

Martinetti

Katz

Franco

2007

2007 IEEE/MTT-S International Microwave Symposium

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This paper discusses a highly efficient linear GaAs MESFET UHF power amplifier developed for application in an SSPA for a government space program. GaAs devices have not been used at UHF because of concerns over stability and their high cost relative to other available device technology. In space, efficiency is a primary concern and reliability can outweigh piece part costs. This amplifier typically produces a power added efficiency of greater than 70 percent and the excellent linearity needed for one of the first applications of WCDMA in space communications. This paper begins by describing the overall UHF subsystem and SSPA, and then presents details of the power amplifier design technique along with measured test results. I. INTRODUCTIONA UHF power amplifier (PA) having both the highest possible efficiency and high linearity, while satisfying the rigorous reliability demands of space hardware, was required for one of the first applications of WCDMA in a communications satellite. The PA required a peak power capability of over 300 watts. An investigation of available Si FET and Bipolar devices failed to locate a device qualified for space with the necessary performance. The radiation hardness of MOS devices was also a concern.

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“…This frequency component causes bias modulation and should be properly terminated [2], [14], [15]. Furthermore, the CPSR assumes the passband of the amplifier to be relatively narrow with a constant frequency response.…”

Section: A Cpsr Model For Im3 Calculationmentioning

confidence: 99%

Theory and design of an ultra-linear square-law approximated LDMOS power amplifier in class-AB operation

Heijden

Graaff

Vreede

et al. 2002

IEEE Trans. Microwave Theory Techn.

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Abstract-This paper describes a power amplifier, employing parallel-connected laterally diffused metal-oxide semiconductor (LDMOS) devices with optimized channel widths and bias offsets to approximate ideal square-law behavior of the overall transconductance in class-AB operation. The proposed method results in a significant linearity improvement over a large dynamic range in comparison to a conventional amplifier in class-A or class-AB operation. Measurements demonstrate an improvement of 20 dB in third-order intermodulation distortion and 10 dB in adjacent channel power ratio for wide-band code-division multiple access at 12-dB output power backoff from the 1-dB gain compression point. Consequently, this amplifier can be operated more toward the compression region with better linearity and drain efficiency compared to a conventional LDMOS power-amplifier design.

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Evaluation and correction of time dependent amplifier non-linearity

Cited by 18 publications

References 4 publications

A linear GaN UHF SSPA with record high efficiency

A linear GaN UHF SSPA with record high efficiency

A Highly Efficient UHF Power Amplifier Using GaAs FETs for Space Applications

Theory and design of an ultra-linear square-law approximated LDMOS power amplifier in class-AB operation

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