Evaluation And Reduction Of Plasma Damage In A High-density, Inductively Coupled Metal Etcher

Colonell, Jennifer; Downey, S.W.; Kook, T.; Patrick, Roger; Siu, S.; Jones, P. L.

doi:10.1109/ppid.1997.596756

2nd International Symposium on Plasma Process-Induced Damage 1997

DOI: 10.1109/ppid.1997.596756

|View full text |Cite

Evaluation And Reduction Of Plasma Damage In A High-density, Inductively Coupled Metal Etcher

Jennifer Colonell

S.W. Downey²,

T. Kook³

et al.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

1999

Publication Types

Select...

Other1

Relationship

Self Cite0

Independent1

Authors

Journals

Cited by 1 publication

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

Characterization of metal profile notching as a result of electron shading in a high-density plasma etcher

Smits

1999

SPIE Proceedings

View full text Add to dashboard Cite

In today's high volume manufacturing of semiconductor devices large amounts of capital are required to establish and operate production facilities. Therefore, IC manufacturers are now "cloning" processes to enable products and technologies to be transferred to other sites to provide optimum production flexibility. Unfortunately, these processes cannot always simply be lifted and "dropped" into a new facility, even if identical tools are used. During a process and product transfer from one Motorola fab to another the metal etch process exhibited some unexpected complications as severely undercut metal profiles were seen on certain products. Although initially not very well understood the reason for this defect turned out to be ion deflection due to electron shading. This paper will show that by applying the relevant statistical tools this mechanism can be controlled or even completely eliminated. Adjustment ofplasma parameters will result in a process which yields excellent profile control.

show abstract

Characterization of metal profile notching as a result of electron shading in a high-density plasma etcher

Smits

1999

SPIE Proceedings

View full text Add to dashboard Cite

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Evaluation And Reduction Of Plasma Damage In A High-density, Inductively Coupled Metal Etcher

Cited by 1 publication

References 4 publications

Characterization of metal profile notching as a result of electron shading in a high-density plasma etcher

Characterization of metal profile notching as a result of electron shading in a high-density plasma etcher

Contact Info

Product

Resources

About