Evaluation of 4H-SiC varactor diodes for microwave applications

Wright, Nigel; Knights, A. P.; O'Neill, AG; Johnson, C.M.

doi:10.1109/edmo.1999.821502

Cited by 2 publications

(2 citation statements)

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“…The advantages of high voltage and high power SiC varactors have been theoretically considered by Tager" and by Wright et a/. 16 In this case the maximum applied voltage to the diode is limited by breakdown voltage (V M =F M d/2) and hence:…”

Section: E=-mentioning

confidence: 99%

Silicon Carbide Diodes for Microwave Applications

Vassilevski

2005

Int. J. Hi. Spe. Ele. Syst.

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Silicon carbide ( SiC ) offers significant advantages for microwave high power devises due to its unique electrical and thermal properties. This review presents a summary of the current position in the development of silicon carbide diodes operating at microwave frequencies: varactors, Schottky barrier mixer diodes, p-i-n and IMPATT diodes. Simplified theory of device operation is given for each kind of microwave diodes to derive the figures of merit, to estimate the potential silicon carbide performance for fabrication of these diodes and to compare SiC with conventional semiconductors. These analyses are followed by description of diode design, fabrication and measured characteristics.

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Section: E=-mentioning

confidence: 99%

Silicon Carbide Diodes for Microwave Applications

Vassilevski

2005

Int. J. Hi. Spe. Ele. Syst.

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“…Therefore the microwave power devices based on 4H-SiC have received increasing attention. The MESFETs (Metal Semiconductor Field Effect Transistor) is a hot research topic [7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%