Evaluation of a Junction Termination Extension APD for Use with Scintillators

Gramsch, E.; Pcheliakov, O; Chistokhin, I. B.; Tishkovsky, E.G.

doi:10.1109/nssmic.2006.356064

Cited by 1 publication

(1 citation statement)

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“…In this current work we use a gate time of 230 ns, very short duration Geiger mode windows on the order of 1 ns are commonly achieved with active quenching circuitry [14]. Improved device fabrication with diffused junctions, in contrast with the ion implanted junctions in this work, also lead to orders of magnitude smaller dark count probabilities [20,21]. A further limitation the gating of the ion beam (typically limited to rise and fall time of ∼25 ns) could be reduced through the use of novel rapid beam deflection to ∼100's of ps.…”

Section: Resultsmentioning

confidence: 99%

Single ion implantation for single donor devices using Geiger mode detectors

Bielejec¹,

Seamons²,

Carroll³

2010

Nanotechnology

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Abstract.Electronic devices that are designed to use the properties of single atoms such as donors or defects have become a reality with recent demonstrations of donor spectroscopy, single photon emission sources, and magnetic imaging using defect centers in diamond. Ion implantation, an industry standard for atom placement in materials, requires augmentation for single ion capability including a method to detect a single ion arrival. Integrating single ion detection techniques with the single donor device construction region allows single ion arrival to be assured. Improving detector sensitivity is linked to improving control over the straggle of the ion as well as providing more flexibility in lay-out integration with the active region of the single donor device construction zone by allowing ion sensing at potentially greater distances. Using a remotely located passively gated single ion Geiger mode avalanche diode (SIGMA) detector we have demonstrated 100% detection efficiency at a distance of >75 m from the center of the collecting junction. This detection efficiency is achieved with sensitivity to ~600 or fewer electron-hole pairs produced by the implanted ion. Ion detectors with this sensitivity and integrated with a thin dielectric, for example 5 nm gate oxide, using low energy Sb implantation would have an end of range straggle of <2.5 nm.Significant reduction in false count probability is, furthermore, achieved by modifying the ion beam set-up to allow for cryogenic operation of the SIGMA detector. Using a detection window of 230 ns at 1 Hz, the probability of a false count was measured as ~10 -1 and 10 -4 for operation temperatures of ~300K and ~77K, respectively. Low temperature operation and reduced false, "dark", counts are critical to achieving high confidence in single ion arrival. For the device performance in this work, the confidence is calculated as a probability of >98% for counting one and only one ion for a false count probability of 10 -4 at an average ion number per gated window of 0.015.

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Section: Resultsmentioning

confidence: 99%