Evaluation of Absolute Flux of Vacuum Ultraviolet Photons in an Electron Cyclotron Resonance Hydrogen Plasma: Comparison with Ion Flux

Zaima, Kazunori; Kurihara, Kazuaki; Sasaki, Koichi

doi:10.1143/jjap.51.08hc02

Cited by 4 publications

(3 citation statements)

References 34 publications

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“…Pal et al [33] X Iglesias et al [34] X Es-sebbar et al [35] X X Iglesias et al [36] X X Proshina et al [37] X Fantz et al [38] X X X Tigrine et al [39] X X Zotovich et al [40] X X Es-sebbar et al [41] Relative intensities X Rakhimova et al [42] X Boffard et al [43] X X X Zaima et al [44] Lee et al [45] Relative intensities X X Pargon et al [46] X Jinnai et al [47] X X Titus et al [48] X X X X Woodworth et al [49] X Barton et al [50] X X Abbreviation: VUV, vacuum ultraviolet.…”

Section: Vuv Effect On Materialsmentioning

confidence: 99%

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Review on vacuum ultraviolet generation in low‐pressure plasmas

Popović

Mozetič

Primc

et al. 2021

Plasma Processes & Polymers

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Low‐pressure nonequilibrium plasmas can be a source of intense radiation in the vacuum ultraviolet (VUV) range which can play an important role in the surface modification of solid materials. Herein, we review the available literature on VUV radiation from low‐pressure gaseous plasmas sustained by inductively and capacitively coupled radiofrequency discharges, microwave, and magnetized discharges. The reported VUV fluxes range from about 1014–1017 photons cm−2·s−1 while electron density range from 109 to 1012 cm−3. The correlations between the measured VUV fluxes and parameters, such as gas pressure, electron density, and discharge power are shown. The results summarized in this study represent a rough guide for the scientists involved in plasma–surface interactions. As the flux of VUV photons depends on numerous parameters, it is currently only possible to estimate its order of magnitude.

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Section: Vuv Effect On Materialsmentioning

confidence: 99%

“…Zaima et al [44] compared the positive ions flux to the VUV photons flux in an electron cyclotron resonance hydrogen plasma (operating at 2.45 GHz). They evaluated the VUV fluxes by looking at the branching ratio between the Lyman and Balmer lines emitted from electronic states of the same principal quantum number.…”

Section: Vuv Effect On Materialsmentioning

confidence: 99%

Review on vacuum ultraviolet generation in low‐pressure plasmas

Popović

Mozetič

Primc

et al. 2021

Plasma Processes & Polymers

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“…32,33) The reported emissive species (such as N 2 and H) are also known to have optical emission in the VUV range. 25,34) The results indicate that the deposition of the SiN x :H film also caused the underlying SiO 2 /Si interface to degrade [Fig. 6(b)].…”

Section: Interface Damage Generation During Pecvd Processmentioning

confidence: 99%

Wavelength Dependence of Photon-Induced Interface Defects in Hydrogenated Silicon Nitride/Si Structure during Plasma Etching Processes

Fukasawa¹,

Matsugai²,

Honda³

et al. 2013

Jpn. J. Appl. Phys.

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The wavelength dependence of SiN x :H/Si interface defect generation caused by vacuum ultraviolet (VUV)/UV radiation from plasma etching processes was investigated. VUV radiation (λ< 200 nm) had almost no impact on the generation of defects at the SiN x :H/Si interface, since all the radiation in this wavelength range was absorbed in the upper SiN x :H film. However, UV radiation (200 < λ< 400 nm) was able to reach the underlying SiN x :H/Si interface and damage the interface. Direct UV radiation reaching the SiN x :H/Si interface dissociated the chemical bonds at the interface and generated interface-trapped charges. The estimated total energy of absorbed photons (E total; 200 < λ< 400 nm) at the interface layer seems to be proportional to the interface-trapped charge density (D it) measured by capacitance–voltage measurement. However, the mechanism underlying the relationship between E total and D it is not yet clear. Visible radiation (λ> 400 nm) had no influence on damage generation on the SiN x :H/Si structure, since the visible radiation was transmitted through upper SiN x :H film and underlying interface layer. The results revealed that UV radiation transmitted through the upper dielectrics can cause the electrical characteristics of underlying metal–oxide–semiconductor (MOS) devices to fluctuate.

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Reactivity of solvated electrons in ionic liquid interacting with low-pressure plasmas

Inagaki

Sasaki

2020

Jpn. J. Appl. Phys.

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We employed the charge transfer to solvent (CTTS) transition to examine the reactivity of solvated electrons in ionic liquid interacting with plasmas. A dye laser pulse at 225 nm was injected into N,N,N-trimethyl-N-propylammonium bis (trifluoromethylsulfonyl) imide with the addition of potassium iodide, which was irradiated with low-pressure plasmas, and the reaction frequency of solvated electrons produced by the CTTS transition was measured by optical absorption spectroscopy. It was observed that the reaction frequency of solvated electrons was enhanced by the plasma irradiation. The enhanced reaction frequency was more remarkable by the irradiation of a nitrogen plasma than argon and oxygen plasmas. In addition, a higher reaction frequency was observed at a closer distance from the plasma-liquid interface. The UV-vis absorbance spectrum of the ionic liquid was changed by the plasma irradiation, indicating the production of unknown species which had a high reaction frequency with solvated electrons in the ionic liquid.

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Evaluation of Absolute Flux of Vacuum Ultraviolet Photons in an Electron Cyclotron Resonance Hydrogen Plasma: Comparison with Ion Flux

Cited by 4 publications

References 34 publications

Review on vacuum ultraviolet generation in low‐pressure plasmas

Review on vacuum ultraviolet generation in low‐pressure plasmas

Wavelength Dependence of Photon-Induced Interface Defects in Hydrogenated Silicon Nitride/Si Structure during Plasma Etching Processes

Reactivity of solvated electrons in ionic liquid interacting with low-pressure plasmas

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